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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Investigations of ZnSe based laser structures on ZnSe substrates by high resolution X-ray diffraction
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Investigations of ZnSe based laser structures on ZnSe substrates by high resolution X-ray diffraction

机译：高分辨率X射线衍射研究ZnSe基体上ZnSe基激光结构

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摘要

The structural quality of homoepitaxially grown ZnSe based layers depends sensitively on the ZnSe substrate preparation prior to the growth. In this paper the consequences of an in situ hydrogen plasma cleaning of ZnSe substrates to the crystalline quality of II-VI based laser structures are discussed. The crystalline properties of the resulting laser structures are compared with those of homoepitaxially grown structures on non-hydrogen cleaned substrates as well as with the characteristics of heteroepitaxially grown lasers on GaAs. The samples were grown by molecular beam epitaxy and characterized by high-resolution x-ray diffraction. Remarkable differences in the strain state of the homoepitaxially grown samples are observed. While the structures grown on hydrogen cleaned ZnSe substrates are pseudomorphic, layers of comparable thickness and lattice mismatch on non-hydrogen cleaned substrates show clear strain relaxation. Triple axis (004) rocking curves reveal distinct differences between the three sample types investigated. According to these measurements, the in situ hydrogen plasma cleaning of ZnSe substrates results in a drastic improvement of crystalline perfection of the homoepitaxial laser structures. However, even the defect density of the optimized homoepitaxial samples exceeds that of heteroepitaxial reference lasers by two orders of magnitude as estimated from the diffuse scattered intensity.
机译：同质外延生长的ZnSe基层的结构质量敏感地取决于生长之前的ZnSe衬底制备。本文讨论了ZnSe衬底的原位氢等离子体清洗对基于II-VI的激光结构的晶体质量的影响。将所得激光结构的晶体特性与未经氢清洗的基板上的同质外延生长结构的晶体特性以及在GaAs上异质外延生长的激光器的特性进行了比较。样品通过分子束外延生长，并通过高分辨率X射线衍射进行表征。观察到同质外延生长样品的应变状态有显着差异。尽管在氢气清洁的ZnSe衬底上生长的结构是假晶，但在非氢气清洁的衬底上具有相当厚度和晶格失配的层显示出明显的应变松弛。三轴（004）摇摆曲线揭示了所研究的三种样品类型之间的明显差异。根据这些测量，ZnSe基板的原位氢等离子体清洗导致同质外延激光结构的晶体完美性的显着改善。但是，即使优化的同质外延样品的缺陷密度也比异质外延参考激光器的缺陷密度高两个数量级，这是根据扩散散射强度估算得出的。

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