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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Control of grain size and size effect on the dielectric constant of diamond films
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Control of grain size and size effect on the dielectric constant of diamond films

机译:控制晶粒尺寸和尺寸对金刚石薄膜介电常数的影响

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This work reports that the optimum diamond grain size can be controlled by adjusting the flow rate of Ar/H-2 in the reaction chamber through orthogonal optimization. The dielectric properties of the diamond films were investigated using an RCL (resistance-capacitance-inductance) meter. It was found that (i) the dominating factors in controlling the grain size are in the following order: Ar/H-2 gas ratio, gas total pressure, plasma power and substrate temperature; (ii) increasing the Ar gas fraction reduces the grain size of synthetic diamond films; and (iii) reducing the grain size lowers the dielectric constant. The grain size effect on the dielectric behaviour can be explained by the change of the crystal field caused by surface bond contraction of the nanosized particles. [References: 16]
机译:这项工作报告说,可以通过正交优化调整反应室中Ar / H-2的流速来控制最佳金刚石晶粒尺寸。使用RCL(电阻-电容-电感)表对金刚石薄膜的介电性能进行了研究。发现(i)控制晶粒尺寸的主要因素按以下顺序:Ar / H-2气体比,气体总压力,等离子体功率和衬底温度; (ii)增加Ar气含量会降低合成金刚石薄膜的晶粒尺寸; (iii)减小晶粒尺寸会降低介电常数。晶粒尺寸对介电性能的影响可以通过由纳米尺寸颗粒的表面键收缩引起的晶场变化来解释。 [参考:16]

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