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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Enhanced ferroelectric properties of Pb(Ta0.05Zr0.48Ti0.47)O-3 thin films on Pt/TiO2/SiO2/Si substrates using La0.67Sr0.33MnO3 buffer layers
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Enhanced ferroelectric properties of Pb(Ta0.05Zr0.48Ti0.47)O-3 thin films on Pt/TiO2/SiO2/Si substrates using La0.67Sr0.33MnO3 buffer layers

机译：使用La0.67Sr0.33MnO3缓冲层增强Pt / TiO2 / SiO2 / Si衬底上Pb（Ta0.05Zr0.48Ti0.47）O-3薄膜的铁电性能

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摘要

Highly [111] oriented Pb(Ta0.05Zr0.48Ti0.47)O-3 (PTZT) ferroelectric thin films were deposited on Pt/TiO2/SiO2/Si substrates using a La0.67Sr0.33MnO3 (LSMO) buffer layer. It is found that the LSMO buffer layers induced highly (111) textured growth of PTZT films. Ferroelectric hysteresis measurements showed that the remnant polarization and coercive field of these films are about 20 mu C cm(-2) and 20 kV cm(-1), respectively. After 1 x 10(11) switching cycles at 5 V (about 100 kV cm(-1) applied held) in fatigue tests, the decay of non-volatile polarization of these films was only about 6% of the initial value. No significant degradation of the polarization can be found in these films over a waiting time of 1 x 10(5) s in the retain test. It is proposed that the high degree of (111) orientation of the PTZT films induced by LSMO is responsible for the excellent performance of the PTZT film capacitors. These studies demonstrated that the PTZT films with the LSMO buffer layer look very promising for ferroelectric memory applications and the developed techniques are very compatible with semiconductor technology. [References: 10]
机译：使用La0.67Sr0.33MnO3（LSMO）缓冲层在Pt / TiO2 / SiO2 / Si衬底上沉积高度[111]取向的Pb（Ta0.05Zr0.48Ti0.47）O-3（PTZT）铁电薄膜。发现LSMO缓冲层引起PTZT膜高度（111）织构化生长。铁电磁滞测量结果表明，这些薄膜的残余极化和矫顽场分别约为20μC cm（-2）和20 kV cm（-1）。在疲劳测试中以5 V（施加约100 kV cm（-1）的电压）进行1 x 10（11）个开关循环后，这些薄膜的非易失性极化衰减仅约为初始值的6％。在保留测试中，经过1 x 10（5）s的等待时间，在这些薄膜中没有发现极化的明显降低。有人提出，由LSMO引起的PTZT薄膜的高（111）取向是PTZT薄膜电容器优异性能的原因。这些研究表明，带有LSMO缓冲层的PTZT膜在铁电存储器应用中看起来非常有前途，并且开发的技术与半导体技术非常兼容。 [参考：10]

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