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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Role of deposition parameters on the photovoltaic quality of amorphous silicon germanium alloys: correlation of microstructure with defect density and electronic transport
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Role of deposition parameters on the photovoltaic quality of amorphous silicon germanium alloys: correlation of microstructure with defect density and electronic transport

机译：沉积参数对非晶硅锗合金光伏质量的影响：微观结构与缺陷密度和电子传输的关系

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Commonly, the germane fraction (f = flow rate of GeH4/flow rate of SiH4 + GeH4) is changed to vary the optical gap (E-opt) of amorphous silicon germanium alloy (a-SiGe:H) films. We report that for a particular f, the change of deposition conditions, the flow rate of diluent gas (H-2) and the radiofrequency (rf) power density can vary the optical gap (1.67-1.40 eV), the germanium content (41.3-22.5 at%) and the microstructural defect density (0.92-0.42), the mobility lifetime product (eta mu tau; 6.81 x 10(-6)-1.46 x 10(-8) cm(2) V-1) in a wide range. Initially, with the increase of the H-2 flow rate up to 20 SCCM for the rf power density of 60 mW cm(-2) and up to 30 SCCM for the rf power density of 30 MW cm(-2), the microstructural. defects decreases, although, the Ge content of a-SiGe:H films increases. The microstructural defects of a-SiGe:H films becomes a direct function of the midgap defect density and a indirect function of eta mu tau. Moreover, the nature of diluent gas is also important. We present that in a wide range of optical gap (1.74-1.36 eV) the defect density is lower, and eta mu tau is higher for the optimized He diluted film compared to those of the optimized H-2 diluted films. [References: 19]
机译：通常，改变锗烷分数（f = GeH4的流速/ SiH4 + GeH4的流速）以改变非晶硅锗合金（a-SiGe：H）膜的光学间隙（E-opt）。我们报告说，对于特定的f，沉积条件，稀释气体（H-2）的流量和射频（rf）功率密度的变化会改变光学间隙（1.67-1.40 eV），锗含量（41.3） -22.5 at％）和微结构缺陷密度（0.92-0.42），移动寿命产品（eta mu tau; 6.81 x 10（-6）-1.46 x 10（-8）cm（2）V-1）大范围。最初，随着射频功率密度为60 mW cm（-2）的H-2流量增加到20 SCCM，射频功率密度为30 MW cm（-2）的H-2流量增加到30 SCCM，微观结构。尽管a-SiGe：H膜的Ge含量增加，但缺陷减少了。 a-SiGe：H薄膜的微观结构缺陷成为中间能隙缺陷密度的直接函数和ηmutau的间接函数。此外，稀释气体的性质也很重要。我们发现，在较宽的光学间隙范围（1.74-1.36 eV）中，与优化的H-2稀释膜相比，优化的He稀释膜的缺陷密度较低，而eta mutau较高。 [参考：19]

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