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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Effect of heavy ion irradiation on the electrical and optical properties of amorphous chalcogenide thin films
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Effect of heavy ion irradiation on the electrical and optical properties of amorphous chalcogenide thin films

机译：重离子辐照对非晶硫属化物薄膜电学和光学性质的影响

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Thin films of amorphous Se90-xSb10Inx and GeSe have been prepared by electron beam evaporation technique. The effect of irradiation of GeSe and Se90-xSb10Inx (x = 0, 5, 10, 15) thin films on the optical energy gap and dc activation energy has been investigated for different doses of C-12(5+) and Ag-107(14+), respectively, at 10(12) and 10(13) ions cm(-2). The optical band gap of GeSe decreases from 1.70 to 1.43 eV on irradiation with a dose of 10(13) ions cm(-2). Similar change was observed in Se90-xSb10Inx thin films. The value of dc activation energy also decreased with the increase in radiation dose. The results are explained by considering the energy deposited due to the electronic energy loss upon irradiation with heavy ions, which modifies the properties of the material. [References: 11]
机译：通过电子束蒸发技术制备了非晶态Se90-xSb10Inx和GeSe薄膜。研究了不同剂量的C-12（5+）和Ag-107对GeSe和Se90-xSb10Inx（x = 0、5、10、15）薄膜的辐照对光能隙和dc活化能的影响。 （14+）分别处于10（12）和10（13）离子cm（-2）。在剂量为10（13）离子cm（-2）的照射下，GeSe的光学带隙从1.70 eV降低到1.43 eV。在Se90-xSb10Inx薄膜中观察到类似的变化。直流激活能量的值也随着辐射剂量的增加而降低。通过考虑由于重离子辐照时电子能量损失而沉积的能量来解释结果，从而改变了材料的性能。 [参考：11]

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