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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Scans along arbitrary directions in reciprocal space and the analysis of GaN films on SiC
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Scans along arbitrary directions in reciprocal space and the analysis of GaN films on SiC

机译：在相互空间中沿任意方向扫描以及SiC上GaN膜的分析

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摘要

Equations governing scans along arbitrary directions in reciprocal space were developed and used to map reciprocal lattice points (RLPs) with radial raster patterns to study mosaic structure in GaN thin films deposited on semi-insulating 4H-SiC substrates using AlN nucleation layers (NLs). The films were grown by molecular beam epitaxy, keeping the GaN growth conditions the same, but using different AlN NL growth conditions. Mosaic tilt angles determined from symmetric RLP breadth measurements were similar for all samples measured, consistent with screw and mixed dislocation densities determined from transmission electron microscopy (TEM) measurements. Mosaic twist was determined using off-axis skew-symmetric high resolution x-ray diffraction measurements of asymmetric RLP breadths, yielding results consistent with grazing incidence in-plane x-ray diffraction twist measurements. A clear correlation between the twist angle and the edge and mixed dislocation densities determined by TEM was not observed, warranting careful consideration of dislocation structure.
机译：提出了控制相互空间中沿任意方向扫描的方程式，并将其用于绘制具有径向光栅图案的相互晶格点（RLP），以研究使用AlN成核层（NL）沉积在半绝缘4H-SiC衬底上的GaN薄膜中的镶嵌结构。通过分子束外延生长膜，使GaN生长条件相同，但使用不同的AlN NL生长条件。通过对称RLP宽度测量确定的镶嵌倾斜角对于所有测量的样品均相似，这与通过透射电子显微镜（TEM）测量确定的螺杆和混合位错密度一致。马赛克扭曲是通过不对称RLP宽度的偏轴对称高分辨率X射线衍射测量确定的，其结果与掠入射平面X射线衍射扭曲测量一致。没有观察到扭曲角和边缘之间的清晰相关性，以及通过TEM确定的混合位错密度，因此需要仔细考虑位错结构。

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