...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Assembly of phosphonic acids on GaN and AlGaN
【24h】

Assembly of phosphonic acids on GaN and AlGaN

机译：在GaN和AlGaN上组装膦酸

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Self-assembled monolayers of octadecylphosphonic acid and 16-phosphonohexadecanoic acid (PHDA) were formed on the semiconductor substrates gallium nitride (GaN) and aluminium gallium nitride (AlGaN). The presence of the molecular layers was verified through x-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy. Structural information was acquired with infrared spectroscopy which verified the bonding orientation of the carboxyl-containing PHDA. The impact of the molecular layers on the channel conductivity and the surface electronic structure of an AlGaN/GaN heterostructure was measured. Our results indicate that pinning of the surface Fermi level prohibits modification of the channel conductivity by the layer. However, a surface dipole of similar to 0.8 eV is present and associated with both phosphonic acid layers. These results are of direct relevance to field-effect-based biochemical sensors and metal-semiconductor contact formation for this system and provide a fundamental basis for further applications of GaN and AlGaN technology in the fields of biosensing and microelectronics.
机译：在半导体衬底上的氮化镓（GaN）和氮化铝镓（AlGaN）上形成了十八烷基膦酸和16-膦酰基十六烷酸（PHDA）的自组装单层。通过X射线光电子能谱和紫外光电子能谱验证了分子层的存在。通过红外光谱获得结构信息，该红外光谱证实了含羧基PHDA的键合取向。测量了分子层对AlGaN / GaN异质结构的沟道电导率和表面电子结构的影响。我们的结果表明表面费米能级的钉扎阻止了该层对沟道电导率的改变。然而，存在类似于0.8eV的表面偶极子并且与两个膦酸层都相关。这些结果与基于场效应的生化传感器和该系统的金属-半导体接触形成直接相关，并为GaN和AlGaN技术在生物传感和微电子领域的进一步应用提供了基础。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号