Frequency-dependent closed-form expressions for inductance and resistance of a single interconnect on a silicon substrate

Ymeri H.; Nauwelaers B.; Maex K.; De Roest D.; Vandenberghe S.

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Frequency-dependent closed-form expressions for inductance and resistance of a single interconnect on a silicon substrate

机译：硅衬底上单个互连的电感和电阻的频率相关闭式表达式

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New closed-form expressions to calculate frequency-dependent distributed inductance and the associated distributed series resistance of a sin-le interconnect on a lossy silicon substrate (CMOS technology) are presented. The proposed analytical model for series impedance is based on a self-consistent field method and the vector magnetic potential equation. It is shown that the calculated frequency-dependent distributed inductance and the associated resistances are in good agreement with the results Obtained from rigorous full-wave solutions and CAD-oriented equivalent-circuit modelling approach. [References: 9]

机译：提出了新的闭合形式的表达式，用于计算有损耗硅衬底上的单线互连的频率相关分布电感和相关的分布串联电阻（CMOS技术）。提出的串联阻抗分析模型基于自洽场方法和矢量磁势方程。结果表明，所计算的频率相关的分布电感和相关的电阻与严格的全波解决方案和面向CAD的等效电路建模方法获得的结果非常吻合。 [参考：9]

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《Journal of Physics, D. Applied Physics: A Europhysics Journal》 |2002年第7期|共9页
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Ymeri H.; Nauwelaers B.; Maex K.; De Roest D.; Vandenberghe S.;
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1. Frequency-dependent closed-form expressions for inductance and resistance of a single interconnect on a silicon substrate [J] . Ymeri H., Nauwelaers B., Maex K., Journal of Physics, D. Applied Physics: A Europhysics Journal . 2002,第7期

机译：硅衬底上单个互连的电感和电阻的频率相关闭式表达式
2. Accurate analytic expressions for frequency-dependent inductance and resistance of single on-chip interconnects on conductive silicon substrate [J] . Ymeri H., Nauwelaers B., Maex K., Physics Letters, A . 2002,第3a4期

机译：导电硅衬底上单个片上互连的频率相关电感和电阻的精确解析表达式
3. New closed-form formula for frequency-dependent resistance and inductance of IC interconnects on silicon substrate [J] . Ymeri H., Maex K., Nauwelaers B. Journal of Micromechanics and Microengineering . 2001,第3期

机译：硅基板上IC互连的频率相关电阻和电感的新闭式公式
4. Accurate closed-form expressions for the frequency-dependent line parameters of coupled on-chip interconnects on silicon substrate [C] . Lan, H., Luoh, Electrical Performance of Electronic Packaging, 2001 . 2001

机译：硅基板上耦合的片上互连的频率相关的线参数的精确闭式表达式
5. High-frequency impedance extraction of interconnects considering substrate effects and exploration of single-walled carbon nanotubes for future VLSI interconnects. [D] . Srivastava, Navin. 2009

机译：考虑衬底效应的互连线的高频阻抗提取和用于未来VLSI互连线的单壁碳纳米管的探索。
6. Method of Calculating the Inductance Value of MEMS Suspended Inductors with Silicon Substrates [O] . Yiyuan Li, Jianhua Li, Lixin Xu 2018

机译：硅衬底MEMS悬浮电感的电感值计算方法
7. 48.5 Closed-Form Expressions of Distributed RLC Interconnects for Analysis of On-Chip Inductance Effects [O] . Yuichi Tanji, Hideki Asai 2013

机译：48.5分布式RLC互连的闭式表达式，用于分析片上电感效应
8. Study of the deposition of single crystal silicon, silicon dioxide and silicon nitride on cold-substrate silicon [R] . Aisenberg, S., Chabot, R. 1969

机译：在冷基板硅上沉积单晶硅，二氧化硅和氮化硅的研究

Frequency-dependent closed-form expressions for inductance and resistance of a single interconnect on a silicon substrate

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