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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Non-linear optical effects and transport phenomena of magnetic semiconductors Pb1-xPrxTe near the semiconductor-metal phase transformation
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Non-linear optical effects and transport phenomena of magnetic semiconductors Pb1-xPrxTe near the semiconductor-metal phase transformation

机译：半导体-金属相变附近的磁性半导体Pb1-xPrxTe的非线性光学效应和传输现象

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摘要

Measurements of transport and non-linear optical (NLO) properties of the new, synthesized semiconductor Pb0.9835Pr0.0165Te in the vicinity of low-temperature metal-semiconductor phase transformations were performed. A correlation between the temperature behaviour of transport properties near the phase transition and NLO susceptibilities of second- and third-order was observed. FTIR spectra show the substantial role played by the Pr3+, localized levels in the observed anomalies.Among the transport properties, the resistivity, Seebeck coefficient and specific heat were measured. The presence of the minimum at about T-min(rho) = 50 K in the temperature dependence of the resistivity rho(T) is due to the metal-semiconductor transition in Pb1-xPrxTe and the low-temperature upturn observed in the resistivity is well fitted by the Mott law. Substitution of PbTe by other rare earths shows the Crucial role played by Fir in the observed dependences.Experimental temperature measurements using photo-Induced NLO (pumped by a UV-laser as well as by second harmonics of the YAG-Nd lasers) and a probing YAG-Nd (at lambda = 1.06 mu m) laser, show the existence of two maxima in the photo-induced second harmonic generation (PISHG) at temperatures 17 and 30 K, the behaviours of which substantially depend on the wavelength of the pump beam. At the same time the third-order two-photon absorption possesses inaxii-na near 50 K, i.e. at about T-min(rho). Such discrepancies in the positions of the temperature maxima are caused by the difference in contributions of the photo-induced anharmonic phonons near the surfaces PISHG and the bulk. Varying the penetration depth of the photo-inducing light one can operate with the output NLO properties.
机译：进行了新型合成半导体Pb0.9835Pr0.0165Te在低温金属-半导体相变附近的传输和非线性光学（NLO）特性的测量。观察到相变附近的输运性质的温度行为与二阶和三阶NLO磁化率之间的相关性。 FTIR光谱显示了Pr3 +在局部异常中的重要作用，并测量了输运性质，电阻率，塞贝克系数和比热。在电阻率rho（T）的温度依赖性下，在约T-min（rho）= 50 K处存在最小值是由于Pb1-xPrxTe中的金属-半导体跃迁和电阻率中观察到的低温向上翘曲是符合莫特法则。用其他稀土取代PbTe表现出Fir在观察到的依赖性中起着至关重要的作用。使用光致NLO（由UV激光以及YAG-Nd激光器的二次谐波泵浦）和探测进行的实验温度测量YAG-Nd（λ= 1.06μm）激光器显示在温度为17和30 K时光致二次谐波产生（PISHG）中存在两个最大值，其行为主要取决于泵浦光束的波长。同时，三阶双光子吸收在50 K附近具有inaxii-na，即大约在T-min（rho）处。温度最大值位置的这种差异是由表面PISHG和主体附近的光诱导非谐声子的贡献差异引起的。改变光诱导光的穿透深度可以使输出的NLO特性起作用。

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