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首页> 外文期刊>Journal of Physics. Condensed Matter >A generalized Cauchy dispersion formula and the refractivity of elemental semiconductors
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A generalized Cauchy dispersion formula and the refractivity of elemental semiconductors

机译：广义柯西色散公式和元素半导体的折射率

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摘要

A generalized Cauchy dispersion formula applicable to both normal and anomalous dispersion in the refractive index of transparent materials is derived from the Kramers-Kronig relations. Several commonly used dispersion formulae are closely related to this result. The expansion coefficients, heretofore considered empirical, are simply the odd moments of the absorption spectrum. These ideas are illustrated for natural diamond, and high-purity silicon and germanium. Analysis of published data for these materials discloses extrinsic dispersive effects in the far infrared, even for 'high-purity' samples. We attribute this dispersion to free-carrier or defect-induced absorptions at energies below the range of measurements. [References: 36]
机译：从Kramers-Kronig关系式导出了适用于透明材料折射率的正常色散和异常色散的广义柯西色散公式。几种常用的色散公式与该结果密切相关。迄今为止被认为是经验的膨胀系数仅仅是吸收光谱的奇数矩。这些想法针对天然钻石，高纯度硅和锗进行了说明。对这些材料的公开数据进行分析后发现，即使对于“高纯度”样品，其在远红外中的外在色散效应也是如此。我们将此色散归因于在测量范围以下的能量下自由载流子或缺陷引起的吸收。 [参考：36]

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