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首页> 外文期刊>Journal of surface investigation: x-ray, synchrotron and neutron techniques >Layer-by-layer analysis of structures containing δ-layers by secondary ion mass spectrometry taking into account the TOF.SIMS-5 depth resolution function
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Layer-by-layer analysis of structures containing δ-layers by secondary ion mass spectrometry taking into account the TOF.SIMS-5 depth resolution function

机译：考虑到TOF.SIMS-5深度分辨率功能，通过二次离子质谱对包含δ层的结构进行逐层分析

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摘要

The depth resolution function of the TOF. SIMS-5 secondary ion mass spectrometer has been studied for several types of analyzed structures under different experimental conditions. A numerical algorithm for calculating the depth distribution profile of an element for a given structure model taking into account ion mixing, induced roughness, and information depth has been realized. The values of the depths of the thin near-surface layers (δ-layers) of Ge in a Si matrix and Si in a GaAs matrix were determined by fitting the calculated profiles to experimental ones by varying parameters of the resolution function. It is shown that determination of the depth of the δ-layer from the peak position on the experimental profile yields a large systematic error, account of which noticeably increases the accuracy of estimating the delta-layer's position.
机译：TOF的深度分辨率功能。 SIMS-5二次离子质谱仪已针对不同实验条件下的几种类型的分析结构进行了研究。已经实现了一种用于计算给定结构模型中元素的深度分布轮廓的数值算法，该算法考虑了离子混合，感应粗糙度和信息深度。通过改变分辨率函数的参数，将计算出的轮廓与实验轮廓拟合，可以确定出Si矩阵中的Ge和GaAs矩阵中的Si的近表面薄层（δ层）的深度值。结果表明，从实验轮廓上的峰值位置确定δ层的深度会产生较大的系统误差，这可明显增加估计三角洲位置的准确性。

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