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首页> 外文期刊>Journal of surface investigation: x-ray, synchrotron and neutron techniques >Study of molecular beam epitaxy of cadmium telluride on sapphire
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Study of molecular beam epitaxy of cadmium telluride on sapphire

机译：碲化镉对蓝宝石分子束外延的研究

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The effect of thermal treatment of (0001) sapphire substrates on the structure of cadmium telluride films grown by molecular beam epitaxy was investigated. The growth process was carried out on a laboratory facility equipped with a mass spectrometer and electron diffractometer. It was established that no annealing or annealing in vacuum (P < 0.13 Pa) results in the growth of polycrystalline CdTe films. Epitaxial CdTe films with a cubic structure of the sphalerite type oriented with the (111) plane parallel to the substrate grow on the substrates annealed in air at T > 1000°C. Electron diffraction patterns showed that they have a mosaic structure and contain twins with the 〈111〉 twinning axis. Atomic-force microscopic images revealed CdTe crystallites with lateral sizes of ~50 nm arranged along the steps on the sapphire substrate surface. These results allowed the conclusion to be drawn that the growth of CdTe on sapphire substrates can occur by the formation of the three-dimensional nucleation centers according to the Volmer-Weber mechanism.
机译：研究了（0001）蓝宝石衬底的热处理对分子束外延生长的碲化镉薄膜结构的影响。生长过程在配备有质谱仪和电子衍射仪的实验室设备上进行。已确定没有退火或在真空中退火（P <0.13 Pa）会导致多晶CdTe薄膜的生长。取向为（111）平面平行于基底的闪锌矿型立方结构的外延CdTe膜在空气中经T> 1000°C退火的基底上生长。电子衍射图表明它们具有镶嵌结构，并包含具有<111>孪晶轴的孪晶。原子力显微镜图像显示，沿蓝宝石衬底表面上的台阶排列的横向尺寸约为50 nm的CdTe晶体。这些结果使得可以得出这样的结论：根据Volmer-Weber机理，通过形成三维核中心可以在蓝宝石衬底上生长CdTe。

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