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首页> 外文期刊>Journal of surface investigation: x-ray, synchrotron and neutron techniques >Determination of the thickness of a gold layer deposited onto silicon via reflected electron spectroscopy
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Determination of the thickness of a gold layer deposited onto silicon via reflected electron spectroscopy

机译：反射电子光谱法测定沉积在硅上的金层的厚度

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摘要

The energy spectra of electrons reflected from a gold layer deposited onto a silicon substrate have been measured when the energy losses are comparable with the energy of a probe electron beam (5 keV) and the elastic energy losses correspond to an electron-beam energy of 14 keV. A subsequent theory for calculating the energy spectra of electrons and light ions reflected from a multilayer target, which is used to interpret the energy spectra measured in the wide range of energy losses, has been developed. It is found that the elastic scattering processes in the gold layer (the thickness of which is tens of monolayers) substantially affect formation of the energy spectra. The Au layer thicknesses calculated by means of the developed theory are compared with those determined from the spectra of elastically reflected electrons. The errors of the Au layer thickness measurements via the proposed method are discussed.
机译：当能量损失可与探针电子束的能量（5 keV）相媲美且弹性能量损失对应于14的电子束能量时，已测量了从沉积在硅衬底上的金层反射的电子的能谱keV。已经开发了用于计算从多层靶反射的电子和光离子的能谱的后续理论，该理论用于解释在宽范围的能量损失中测得的能谱。发现金层（其厚度为几十个单层）中的弹性散射过程实质上影响了能谱的形成。借助于发达的理论计算出的金层厚度与由弹性反射电子的光谱确定的厚度进行了比较。讨论了通过所提出的方法测量金层厚度的误差。

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