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首页> 外文期刊>Journal of surface investigation: x-ray, synchrotron and neutron techniques >Photoemission spectroscopy and microscopy of n-, p-GaAs(110) homostructures
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Photoemission spectroscopy and microscopy of n-, p-GaAs(110) homostructures

机译：n-，p-GaAs（110）均质结构的光发射光谱和显微学

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Zinc-blend III-V semiconductors being cleaved along nonpolar (110) planes yield atomically clean surfaces due to their charge neutrality, which can be employed as mirror planes for optical resonators. As a result of the Ga3d core level photoemission measurements after the n-, p-GaAs (110) plane cleavage in situ of doped semiconductors with 14 nominally identical p-n homojunctions having optically flat cleaved surface under the optical microscope inspection, the estimate of the Fermilevel positions on energy scale were acquired for p- and n-epilayers. The two-dimentional photoemission image for p-n homojunction was studied as well, using the focused synchrotron radiation beam (diameter 0. 7 μm, 95 eV, ~10~10 phot./s) at the scanning photoemission microscope. The average value of surface band bending for p-epilayer measured from the energy position of ideal flat-band conditions, was equal to 0. 12 ± 0. 05 eV, and that for n-epilayer-0. 16 ± 0. 08 eV, the spectrometer energy resolution being <0. 15 eV. The detailed analysis of the experimental data was carried out in order to clarify the deviation fsrom ideal flat band conditions characteristic for absence of surface cleavage defects. Comparison was done with the well-known literature data on theoretical and experimental investigations of cleavage defects. The experimental results leading to different deviations from ideal flat-band conditions for each cleavage are explained by extrinsic local microscopic defects of cleavage which can appear accidentally and unpredictably, since the system dynamics during cleavage is a highly nonlinear many-body process with many degrees of freedom.
机译：沿着非极性（110）平面分裂的锌混合III-V半导体由于其电荷中性而产生原子清洁的表面，可以用作光学谐振器的镜面。在对具有14个名义上相同的pn同质结，具有光学平坦裂开表面的掺杂半导体进行n-，p-GaAs（110）平面原位裂开后的Ga3d核心能级光发射测量的结果，费米能级的估计在p-和n-外延层上获得了能量尺度上的位置。使用聚焦同步辐射光束（直径0. 7μm，95 eV，〜10〜10 phot./s），在扫描光发射显微镜下，还研究了p-n同质结的二维光发射图像。从理想平带条件的能量位置测得的p型外延层表面带弯曲的平均值等于0. 12±0. 05 eV，n型外延层-0。 16±0. 08 eV，光谱仪能量分辨率<0。 15 eV。对实验数据进行了详细的分析，以阐明在没有表面分裂缺陷的情况下偏离理想平坦带条件的特征。比较了与关于切割缺陷的理论和实验研究的著名文献数据。导致每次切割偏离理想平带条件的不同实验结果，是由切割的外部局部微观缺陷解释的，这种缺陷可能偶然且不可预测地出现，因为切割过程中的系统动力学是高度非线性的多体过程，具有多个自由。

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