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首页> 外文期刊>Journal of Superconductivity >Substrate Contribution to the Surface Impedance of HTS Films on Si
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Substrate Contribution to the Surface Impedance of HTS Films on Si

机译:衬底对Si上HTS膜表面阻抗的贡献

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摘要

We study the effects of semiconductor substrates on the surface impedance of high-T{sub}C Superconductor (HTS) YBa{sub}2Cu{sub}3O{sub}(7-δ) (YBCO) films. The characteristic impedance of silicon (Si) (for different doping levels and for different charge carrier scattering times) is evaluated. In particular, the most relevant features of Si electrodynamics are highlighted by the introduction of suitable normalized quantities. The effective surface impedance of the YBCO films on Si substrates is then calculated and discussed for different temperatures and frequencies in the microwave range, comparing the obtained results to their limiting expressions for bulk and thin-film HTS. Our analysis shows how the widely used thin-film approximation for the surface impedance can fail, critically highlighting the conditions it requires to be correctly used. We show that substrate contributions can heavily influence the overall response.
机译:我们研究了半导体衬底对高T {sub} C超导体(HTS)YBa {sub} 2Cu {sub} 3O {sub}(7-δ)(7-δ)(YBCO)薄膜的表面阻抗的影响。评估了硅(Si)的特性阻抗(针对不同的掺杂水平和针对不同的载流子散射时间)。特别是,通过引入合适的归一化量可以突出显示Si电动力学最相关的特征。然后,针对微波范围内的不同温度和频率,计算并讨论了Si基板上YBCO膜的有效表面阻抗,并将所得结果与其在体和薄膜HTS中的极限表达式进行了比较。我们的分析表明,广泛使用的表面阻抗薄膜近似方法可能会失败,从而突显了正确使用薄膜所需要的条件。我们表明底物的贡献会严重影响整体响应。

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