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首页> 外文期刊>Journal of Superconductivity >Fabrication and transport properties of MgB{sub}2 thin films and tunnel junctions
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Fabrication and transport properties of MgB{sub}2 thin films and tunnel junctions

机译：MgB {sub} 2薄膜和隧道结的制备和传输性能

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摘要

We report on fabrication and characterization of MgB{sub}2 thin films and tunnel junction structures. The MgB{sub}2 films were prepared on Al{sub}2O{sub}3, Si, glass, and plastic foil substrates by either vacuum codeposition of boron and magnesium, or high-temperature magnesium annealing of boron films. The crystalline structure of our films depended directly on the method of preparation. The films prepared by codeposition and postannealed in Ar atmosphere were amorphous with nanocrystal inclusions and were characterized by very smooth surfaces. On the other hand, the boron-precursor films annealed in magnesium vapor were rough, polycrystalline with approximately 1-μm-diameter single-crystal blocks. Because of their surface quality, the amorphous films were used for preparation of point contact junctions and for optical characterization. The point-contact spectra of tested junctions exhibited a two-gap structure. The MgB{sub}2 polycrystalline films was used for bulk transport studies. The best films were characterized by the critical temperature T{sub}c of up to 39 K and the current density j{sub}c at 4.2 K of about 10{sup}7 A/cm{sup}2.
机译：我们报告了MgB {sub} 2薄膜和隧道结结构的制造和表征。通过硼和镁的真空共沉积或硼膜的高温镁退火，在Al {sub} 2O {sub} 3，Si，玻璃和塑料箔基板上制备MgB {sub} 2膜。我们薄膜的晶体结构直接取决于制备方法。通过共沉积制备并在Ar气氛中进行后退火的薄膜是无定形的，具有纳米晶体夹杂物，并且具有非常光滑的表面。另一方面，在镁蒸气中退火的硼前体膜是粗糙的多晶，具有约1μm直径的单晶块。由于其表面质量，非晶膜用于制备点接触结和光学表征。测试的结点的点接触光谱显示出两间隙结构。 MgB {sub} 2多晶薄膜用于批量运输研究。最好的薄膜的特征在于，临界温度T {c}高达39 K，4.2 K时的电流密度j {sub} c约为10 {sup} 7 A / cm {sup} 2。

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