Observation of e{sup}2/h conductance steps in a side-gate point contact on In{sub}0.75Ga{sub}0.25As/In{sub}0.75Al{sub}0.25As heterostructure

T. Kita; S. Gozu; Y. Sato; S. Yamada

首页> 外文期刊>Journal of Superconductivity >Observation of e{sup}2/h conductance steps in a side-gate point contact on In{sub}0.75Ga{sub}0.25As/In{sub}0.75Al{sub}0.25As heterostructure

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Observation of e{sup}2/h conductance steps in a side-gate point contact on In{sub}0.75Ga{sub}0.25As/In{sub}0.75Al{sub}0.25As heterostructure

机译：在In {sub} 0.75Ga {sub} 0.25As / In {sub} 0.75Al {sub} 0.25As异质结构的侧栅点接触中观察e {sup} 2 / h电导阶跃

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In 1996, it was suggested by K. J. Thomas et al. (Phys. Rev. Lett. 77, 135 (1996)) that 0.7(2e{sup}2/h) conductance structure in Quasi-1DEG (Q1DEG) at GaAs/AlGaAs heterostructure might be related to spin polarization at zero magnetic field. We have recently studied spontaneous spin-splitting in the 2DEGs formed at normal metamorphic In{sub}0.75Ga{sub}0.25As/In{sub}0.75Al{sub}0.25As heterojunctions grown on GaAs substrates and obtained the value of ≤10 meV as the zero-field splitting at Fermi level (Y. Sato et al., J. Appl. Phys. 89,8017 (2001)). In this work, we attempted to observe spin-related phenomena in this heterojunction Q1DEGs at zero magnetic field. We observed e{sup}2/h conductance steps in low electron concentration side-gate point contact.

机译：在1996年，由K. J. Thomas等人提出。（Phys.Rev.Lett.77，135（1996）），在GaAs / AlGaAs异质结构的准1DEG（Q1DEG）中的0.7（2e {sup} 2 / h）电导结构可能与零磁场下的自旋极化有关。我们最近研究了在GaAs衬底上生长的正常变质In {sub} 0.75Ga {sub} 0.25As / In {sub} 0.75Al {sub} 0.25As异质结上形成的2DEG中的自旋自旋分裂，并得出了≤10的值meV是在费米能级分裂的零场（Y. Sato等人，J。Appl。Phys。89,8017（2001））。在这项工作中，我们试图在零磁场下观察此异质结Q1DEG中的自旋相关现象。我们在低电子浓度侧栅点接触中观察到e {sup} 2 / h电导步骤。

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《Journal of Superconductivity》 |2003年第2期|共3页
作者
T. Kita; S. Gozu; Y. Sato; S. Yamada;
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正文语种 eng
中图分类工程物理学;
关键词
Quasi-1DEG; Spin splitting; e{sup}2/h conductance; Split-gates;

机译：准1DEG;自旋分裂;e {sup} 2 / h电导;分裂门;

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1. Observation of e{sup}2/h conductance steps in a side-gate point contact on In{sub}0.75Ga{sub}0.25As/In{sub}0.75Al{sub}0.25As heterostructure [J] . T. Kita, S. Gozu, Y. Sato, Journal of Superconductivity . 2003,第2期

机译：在In {sub} 0.75Ga {sub} 0.25As / In {sub} 0.75Al {sub} 0.25As异质结构的侧栅点接触中观察e {sup} 2 / h电导阶跃
2. High Transconductance of 2.25 S/mm Observed at 16 K for 195-nm-Gate In{sub}0.75Ga{sub}0.25As/In{sub}0.52Al{sub}0.48As HEMT Fabricated on (411)A-Oriented InP Substrate [J] . I. Watanabe, K. Shinohara, T. Kitada, IEEE Electron Device Letters . 2005,第7期

机译：在（411）A取向InP上制造的195 nm栅极In {sub} 0.75Ga {sub} 0.25As / In {sub} 0.52Al {sub} 0.48As HEMT，在16 K下观察到2.25 S / mm的高跨导基质
3. Connective neck evolution and conductance steps in hot point contacts - art. no. 045413 [J] . Halbritter A., Csonka S., Kolesnychenko OY., Physical Review, B. Condensed Matter . 2002,第4期

机译：热点接触中的结缔颈演变和电导步骤-艺术。没有。 045413
4. Self-aligned Inversion-channel In{sub}0.75Ga{sub}0.25As MOSFETs using MBE-Al{sub}2O{sub}3/Ga{sub}2O{sub}3(Gd{sub}2O{sub}3) and ALD-Al{sub}2O{sub}3 as Gate Dielectrics [C] . T. D. Lin, H. C. Chiu, P. Chang, European Solid State Device Research Conference . 2009

机译：使用Mbe-Al {sub} 20 {sub} 3 / ga {sub} 2o {sub} 3（gd {sub} 3（gd {sub} 3（gd {sub} 2o {sub} 3）在{sub} 0.75ga {sub} 0.25as mosfet中的自对准频道。（gd {sub} 2o {sub} 3 ）和Ald-al {sub} 2o {sub} 3作为栅极电介质
5. Conductance oscillations in quantum point contacts of InAs/GaSb heterostructures [O] . Papaj, Michał, Cywiński, Łukasz, Wróbel, Jerzy, 2016

机译：Inas / Gasb的量子点接触中的电导振荡异质

Observation of e{sup}2/h conductance steps in a side-gate point contact on In{sub}0.75Ga{sub}0.25As/In{sub}0.75Al{sub}0.25As heterostructure

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