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Polished surface roughness of optoelectronic components made of monocrystalline materials

机译:单晶材料制成的光电组件的抛光表面粗糙度

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摘要

A study of the mechanism of formation of monocrystal planes of different crystallographic orientations has revealed that in polishing of sapphire the surface roughness parameters Ra, Rq, Rmax decrease in the series c > r > m > a with decreasing dielectric permittivity and thermal conductivity coefficient of the workpiece material, debris particle height, and Lifshitz constant that represents the energy of interaction between the polishing powder grains and the workpiece surface. The minimum allowable values of surface roughness parameters for atomically smooth surfaces have been defined, which linearly depend on interplanar spacings and decrease in the series r > a > c > m.
机译:对不同晶体学取向的单晶面形成机理的研究表明,在抛光蓝宝石时,表面粗糙度参数Ra,Rq,Rmax在c> r> m> a系列中降低,且介电常数和导热系数降低。工件材料,碎屑颗粒高度和Lifshitz常数,代表抛光粉末颗粒与工件表面之间相互作用的能量。已经定义了原子光滑表面的表面粗糙度参数的最小允许值,其线性依赖于晶面间距和r> a> c> m系列的减小。

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