Effect of phosphorus ion implantation on back gate effect of partially depleted SOI NMOS under total dose radiation

Li Leilei; Zhou Xinjie; Yu Zongguang; Feng Qing

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Effect of phosphorus ion implantation on back gate effect of partially depleted SOI NMOS under total dose radiation

机译：总剂量辐射下磷离子注入对部分耗尽SOI NMOS背栅效应的影响

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The mechanism of improving the TID radiation hardened ability of partially depleted silicon-on-insulator (SOI) devices by using the back-gate phosphorus ion implantation technology is studied. The electron traps introduced in SiO_2 near back SiO_2/Si interface by phosphorus ions implantation can offset positive trapped charges near the back-gate interface. The implanted high concentration phosphorus ions can greatly reduce the back-gate effect of a partially depleted SOI NMOS device, and anti-total-dose radiation ability can reach the level of 1 Mrad(Si) for experimental devices.

机译：研究了利用背栅磷离子注入技术提高部分耗尽型绝缘体上硅（SOI）器件的TID辐射硬化能力的机理。通过磷离子注入在背SiO_2 / Si界面附近的SiO_2中引入的电子陷阱可以抵消背栅界面附近的正陷阱电荷。注入的高浓度磷离子可以大大降低部分耗尽的SOI NMOS器件的背栅效应，并且抗总剂量辐射能力可以达到1 Mrad（Si）的实验器件水平。

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来源
《Journal of Semiconductors》 |2015年第1期|共1页
作者
Li Leilei; Zhou Xinjie; Yu Zongguang; Feng Qing;
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正文语种 eng
中图分类无线电电子学、电信技术;
关键词
back gate phosphorus ions implantation; total-dose radiation; SOI MOS; back-gate effect;

机译：背栅磷离子注入;总剂量辐射;SOI MOS;背栅效应;

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专利

1. Effect of phosphorus ion implantation on back gate effect of partially depleted SOI NMOS under total dose radiation [J] . Li Leilei, Zhou Xinjie, Yu Zongguang, Journal of Semiconductors . 2015,第1期

机译：总剂量辐射下磷离子注入对部分耗尽SOI NMOS背栅效应的影响
2. A Comparison of Floating-Body Potential in H-Gate Ultrathin Gate Oxide Partially Depleted SOI pMOS and nMOS Devices Based on 90-nm SOI CMOS Process [J] . Shiao-Shien Chen, Shiang Huang-Lu, Tien-Hao Tang IEEE Electron Device Letters . 2004,第4期

机译：基于90nm SOI CMOS工艺的H-Gate超薄栅极氧化物部分耗尽的SOI pMOS和nMOS器件中浮体电位的比较
3. Effects of total dose irradiation on the threshold voltage of H-gate SOI NMOS devices [J] . Qian-Qiong Wang, Hong-Xia Liu, Shu-Peng Chen, 核技术（英文版） . 2016,第005期

机译：总剂量辐照对H栅SOI NMOS器件阈值电压的影响
4. Total dose radiation effects in partially-depleted SOI transistors with ultrathin gate oxide [C] . Jun, B., Fouillat, . 2004

机译：具有超薄栅极氧化物的部分耗尽SOI晶体管中的总剂量辐射效应
5. Radiation-hardened analog circuits in partially-depleted SOI CMOS. [D] . Perez, Alfredo. 2005

机译：部分耗尽的SOI CMOS中的辐射硬化模拟电路。
6. Short-Term Treatment with a SOD/Catalase Mimetic EUK-207 Mitigates Pneumonitis and Fibrosis after Single-Dose Total-Body or Whole-Thoracic Irradiation [O] . Feng Gao, Brian L. Fish, Aniko Szabo, -1

机译：短期治疗与sOD /过氧化氢酶模拟物EUK-207减轻肺炎和纤维化的单一剂量的全身或全胸照射后
7. Investigation of Unique Total Ionizing Dose Effects in 0.2 um Partially-Depleted Silicon-on-Insulator Technology [O] . Zhang, Y. W., Huang, H. X., Bi, D. W., 2013

机译：0.2μm的独特总电离剂量效应研究部分耗尽的绝缘硅技术
8. New Insights into Fully-Depleted SOI Transistor Response During Total- Dose Irradiation [R] . Burns, J. A. , Dodd, P. E. , Keast, C. L. , 1999

机译：全剂量辐照期间全耗尽sOI晶体管响应的新见解

Effect of phosphorus ion implantation on back gate effect of partially depleted SOI NMOS under total dose radiation

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