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首页> 外文期刊>Journal of the Korean Physical Society >Electrical properties of Ag Schottky contacts to hydrothermally-grown polar and nonpolar bulk ZnO
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Electrical properties of Ag Schottky contacts to hydrothermally-grown polar and nonpolar bulk ZnO

机译：Ag肖特基触头与水热生长的极性和非极性块状ZnO的电学性质

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摘要

The electrical properties of Ag Schottky contacts to hydrothermally-grown polar (Zn- and Opolar) and nonpolar (m-plane) bulk ZnO were investigated. Ohmic-like behavior for Zn-polar ZnO and rectifying behaviors for O-polar and m-plane ZnO were observed from current-voltage (I-V) measurements. Schottky contacts to O-polar ZnO were found to have higher barrier heights and lower ideality factors than those to m-plane ZnO. Higher series resistances were found for both the Zn-polar and the m-plane ZnO compared to the O-polar ZnO probably due to the presence of the interfacial layer and interface states. The homogeneous barrier heights obtained from linear fitting to the effective barrier height vs. ideality factor plots were similar to those obtained from capacitance-voltage (C-V) measurements. A higher degree of oxidation at the Ag-ZnO interface might occur for O-polar ZnO than for m-plane ZnO, increasing the barrier heights. The large dispersion in the capacitance for m-plane ZnO was related to the excess capacitance due to the interface states.
机译：研究了Ag Schottky触点对水热生长的极性ZnO和非极性m平面ZnO的电学性质。从电流-电压（I-V）测量中可以观察到Zn极性ZnO的类似欧姆行为以及O极性和m平面ZnO的整流行为。与m平面ZnO相比，发现与O极ZnO的肖特基接触具有更高的势垒高度和更低的理想因子。与O极ZnO相比，发现Zn极性和m平面ZnO的串联电阻更高，这可能是由于存在界面层和界面态。从线性拟合到有效势垒高度与理想因子图的线性拟合中获得的均匀势垒高度类似于从电容-电压（C-V）测量获得的均一势垒高度。 O极性ZnO可能比m平面ZnO在Ag-ZnO界面发生更高的氧化程度，从而增加了势垒高度。 m面ZnO电容的大分散与界面状态导致的多余电容有关。

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