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首页> 外文期刊>Journal of the Korean Physical Society >Preparation and Thermoelectric Properties of Iodine-doped Bi_2Te_3-Bi_2Se_3 Solid Solutions
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Preparation and Thermoelectric Properties of Iodine-doped Bi_2Te_3-Bi_2Se_3 Solid Solutions

机译：碘掺杂Bi_2Te_3-Bi_2Se_3固溶体的制备及热电性能

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摘要

Bismuth chalcogenides, such as p-type (Bi,Sb)_2Te_3 and n-type Bi_2(Te,Se)_3, are known to have excellent thermoelectric properties at temperatures near room temperature. Since Bi_2Te_3, Sb_2Te_3 and Bi_2Se_3 have the same class of crystal symmetry, they can form homogeneous solid solutions. The thermoelectric figure of merit can be improved by increasing the power factor through doping to optimize the carrier concentration and/or by reducing the thermal conductivity through the formation of solid solutions for phonon scattering. In this study, n-type Bi_2Te_(2.7)Se_(0.3):I_m (m = 0.0 - 0.015) solid solutions were successfully prepared by using encapsulated melting and hot pressing. The increase in the carrier concentration induced by I doping led to an increase in both the electrical conductivity and the electronic thermal conductivity, with I atoms acting as phonon scattering centers reducing the lattice thermal conductivity. The undoped solid solution had a carrier concentration of 6.27 × 10~(19) cm~(-3), a power factor (PF) of 1.71 mWm~(-1)K~(-2), and a dimensionless figure of merit (ZT) of 0.54 at 323 K. However, the ZT value was improved by I doping due to the increased PF, demonstrating a maximum of ZT = 1.13 at 423 K for Bi_2Te_(2.7)Se_(0.3):I_(0.0075).
机译：已知诸如接近于室温的p型（Bi，Sb）_2Te_3和n型Bi_2（Te，Se）_3的硫属铋化物具有优异的热电性能。由于Bi_2Te_3，Sb_2Te_3和Bi_2Se_3具有相同的晶体对称性，因此它们可以形成均匀的固溶体。通过掺杂优化载流子浓度来提高功率因数和/或通过形成用于声子散射的固溶体来降低热导率，可以改善热电性能。在这项研究中，通过包封的熔融和热压成功地制备了n型Bi_2Te_（2.7）Se_（0.3）：I_m（m = 0.0-0.015）固溶体。由I掺杂引起的载流子浓度的增加导致电导率和电子热导率的增加，其中I原子充当声子散射中心降低了晶格的热导率。未掺杂的固溶体的载流子浓度为6.27×10〜（19）cm〜（-3），功率因数（PF）为1.71 mWm〜（-1）K〜（-2），无因次系数（ZT）在323 K时为0.54。但是，由于PF的增加，I掺杂改善了ZT值，这表明Bi_2Te_（2.7）Se_（0.3）：I_（0.0075）在423 K时ZT的最大值为1.13。

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