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首页> 外文期刊>Journal of Theoretical Biology >A resonance model gives the response to membrane potential for an ion channel: II. Simplification of the calculation, and prediction of stochastic resonance
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A resonance model gives the response to membrane potential for an ion channel: II. Simplification of the calculation, and prediction of stochastic resonance

机译：共振模型给出了离子通道对膜电位的响应：II。简化计算和预测随机共振

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In a previous communication (Green, 1998), the initial step in ion channel gating for voltage-gated channels was attributed to the tunneling of a proton between groups with similar pK values, under the influence of an electric field. This is in contrast to the standard thermally activated model, which leads to a "Boltzmann equation" for the gating current. In the paper that introduced the present model, the current-voltage curve was determined from a resonance effect, in which gating began when the local voltage crossed a threshold, causing a proton to tunnel to a new location. We have therefore investigated further the consequences of tunneling as the first step in gating; we find a method of improving the previous calculation. We also calculate a consequence of our model that has yet to be experimentally looked for, stochastic resonance. With gating a threshold process, one expects that such an effect should exist. Only a small effect is predicted by our calculation, but it may be detectable. If it is it would make possible the determination of important characteristics of the initiation of gating. For this reason it is worth determining the nature of the stochastic resonance to be expected. In addition, we have investigated further the possible ways of understanding our resonance model itself. The model assumes that not all channels have the same threshold, as local perturbations in the potential interfere. We therefore assume a Gaussian distribution of the thresholds, which is simpler than in the previous paper, in which a Gaussian gave inadequate results with the method used there. In this paper, we have reduced the number of parameters to two, and obtained the current-voltage curve, gating current, the response to a large sine wave (in the previous paper, the model was more complex), and stochastic resonance. (C) 2000 Academic Press. [References: 19]
机译：在以前的通信中（Green，1998），电压门控通道的离子通道门控的初始步骤归因于在电场的影响下质子在具有相似pK值的组之间的隧穿。这与标准的热激活模型相反，后者导致门控电流出现“玻尔兹曼方程”。在介绍本模型的论文中，电流-电压曲线是由共振效应确定的，当局部电压超过阈值时，门控开始，从而使质子隧穿到新的位置。因此，我们进一步研究了隧穿作为选通第一步的后果。我们找到了一种改进先前计算的方法。我们还计算了我们的模型的结果，该结果尚未进行实验寻找，即随机共振。通过门限处理，人们期望这种效果应该存在。通过我们的计算只能预测出很小的影响，但是可能是可以检测到的。如果是这样，将有可能确定门控启动的重要特性。因此，有必要确定所预期的随机共振的性质。另外，我们进一步研究了理解共振模型本身的可能方法。该模型假设并非所有通道都具有相同的阈值，因为潜在的局部扰动会产生干扰。因此，我们假设阈值的高斯分布比以前的论文中要简单得多，在前一种论文中，高斯给出的方法所用的结果不足。在本文中，我们将参数的数量减少为两个，并获得了电流-电压曲线，门控电流，对大正弦波的响应（在先前的论文中，模型更为复杂）以及随机共振。 （C）2000学术出版社。 [参考：19]

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