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首页> 外文期刊>Journal of the Physical Society of Japan >Evolution of Kr Precipitates in Kr-Implanted Al as Observed by the Channelling Method
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Evolution of Kr Precipitates in Kr-Implanted Al as Observed by the Channelling Method

机译：通道法观察K注入铝中K沉淀的演变

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摘要

The evolution of Kr precipitates at room temperature from nucleation to the formation of solid Kr precipitates in Al implanted with 50 keV Kr+ ions has been studied through the site change of Kr atoms determined by the channelling method. A previous channelling study reported that nucleation centres are various types of Kr-vacancy (V) complexes formed at low implantation doses. In this study, the initial stage of growth of Kr precipitates to bubbles and a key process towards the formation of epitaxially aligned solid Kr precipitates are investigated. The growth of Kr precipitates to bubbles proceeds from the accumulation of Kr atoms migrating to Kr-V complexes by radiation-enhanced diffusion. The Kr bubbles are in the fluid state. As to the epitaxial alignment, the following mechanism is proposed. At implantation doses higher than 2 x 10(15) Kr/cm(2), small clusters of Kr atoms located at octahedral (O) or displaced O sites are formed on the planes parallel to {111} planes at the bubble-matrix interface at the {111} facets of bubbles. They act as a trigger for epitaxial alignment.
机译：通过沟道法确定了Kr原子的位点变化，研究了室温下Kr析出物从成核到固体Kr析出物在注入50 keV Kr +离子的Al中的演变。先前的一项通道研究报告称，成核中心是在低注入剂量下形成的各种类型的Kr-空位（V）复合物。在这项研究中，Kr沉淀物生长到气泡的初始阶段，并研究了形成外延排列的固体Kr沉淀物的关键过程。 Kr沉淀物向气泡的生长是通过通过辐射增强扩散迁移到Kr-V络合物的Kr原子的积累而产生的。 Kr气泡处于流体状态。关于外延对准，提出了以下机理。在高于2 x 10（15）Kr / cm（2）的注入剂量下，在气泡矩阵界面处与{111}平面平行的平面上会形成八面体（O）或位移的O位的Kr原子小簇在气泡的{111}面上。它们充当外延对准的触发。

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