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首页> 外文期刊>Journal of the Physical Society of Japan >Discrete Change in Magnetization by Chiral Soliton Lattice Formation in the Chiral Magnet Cr1/3NbS2
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Discrete Change in Magnetization by Chiral Soliton Lattice Formation in the Chiral Magnet Cr1/3NbS2

机译：手性磁铁Cr1 / 3NbS2中手性孤子晶格形成的磁化离散变化

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摘要

In the chiral magnet Cr1/3NbS2, discrete changes in the magnetization (M) caused by the formation of a chiral soliton lattice (CSL) were observed in magnetization curve measurements using a single crystal of submillimeter thickness. When M is measured with a minimal increment of the magnetic field H, 0.15 Oe, discrete changes in M are observed in the H region that exhibits definite magnetic hysteresis. In particular, enormous discrete changes in M are observed as H decreases from the field above the saturation field, while fine M steps are also found in the intermediate H range independently of the sweeping direction of the field. The former is considered as a type of enormous Barkhausen effect associated with the CSL formation. The latter originates from the change in soliton number during the CSL formation.
机译：在手性磁铁Cr1 / 3NbS2中，使用亚毫米厚度的单晶在磁化曲线测量中观察到由形成手性孤子晶格（CSL）引起的磁化强度（M）的离散变化。当以最小的磁场H增量0.15 Oe来测量M时，会在H区域中观察到M的离散变化，该变化呈现出确定的磁滞。特别是，随着H从饱和场以上的场减小，观察到M的巨大离散变化，而在中间H范围内也发现了精细的M阶跃，而与场的扫掠方向无关。前者被认为是与CSL形成有关的巨大巴克豪森效应的一种。后者源自CSL形成过程中孤子数的变化。

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