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首页> 外文期刊>Journal of Ceramic Processing Research. (Text in English) >A novel approach to the suppression of growth-induced polytype domains during the growth of large-size SiC single crystals
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A novel approach to the suppression of growth-induced polytype domains during the growth of large-size SiC single crystals

机译：一种抑制大尺寸SiC单晶生长过程中生长诱导多型域的新方法

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摘要

The occurrence of polytype domains in the central region decreases the yield of wafers, when large diameter 6H-, 4H-silicon carbide(SiC) single crystals are grown by a sublimation method. Accordingly, the suppression of polytype domains is very important. Previous studies revealed that polytype domains occur in SiC crystals during the growth process and the domains were based on the root of micropipes and macro-defects. However, in spite of many studies and much development, the suppression of polytype domains has not been perfectly solved. In this study, we verified the systematic experimental results that the relationship between ΔT_(B-U) (vertical temperature gradient) and ΔT_(F-I) (the temperature difference between initial temperature and final temperature at bottom of crucible) has an important effect on the occurrence of polytype domains. It was found that the optimization of ΔT_(F-I) was more important than that of ΔT_(B-U) in order to reduce the macro-defects and polytype domains.
机译：当通过升华方法生长大直径的6H-，4H-碳化硅（SiC）单晶时，在中心区域出现多型畴会降低晶片的产量。因此，抑制多型域是非常重要的。先前的研究表明，在生长过程中，SiC晶体中存在多型结构域，并且这些结构域是基于微管和宏观缺陷的根源。然而，尽管进行了许多研究和大量开发，但对多型结构域的抑制仍未完全解决。在这项研究中，我们验证了系统实验结果，即ΔT_（BU）（垂直温度梯度）与ΔT_（FI）（坩埚底部初始温度与最终温度之间的温差）之间的关系对发生有重要影响多型域。已经发现，为了减少宏缺陷和多型域，ΔT_（F-I）的优化比ΔT_（B-U）的优化更为重要。

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