Thermal Stability of Au Thin Film Deposited on Al_2O_3 Substrate with RuO_2 Adhesion Layer

Mitsuhiko MATSUI

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Thermal Stability of Au Thin Film Deposited on Al_2O_3 Substrate with RuO_2 Adhesion Layer

机译：具有RuO_2粘附层的Al_2O_3衬底上沉积的Au薄膜的热稳定性

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The effect of RuO_2 thin films on stabilizing the thermal properties of Au thin films deposited on A1_2O_3 substrates was investigated. Dependencies on temperature of both sheet resistance and adhesion strength were measured. The adhesion strength of the Au/RuO_2 system was constant with temperature, while that of the Au/Pt/Ti system decreased as increasing temperature beyond 400 deg C. The adhesive properties of the Au/ RuO_2 system were not influenced by heating and stable up to 800 deg C. The sheet resistance of the Au/RuO_2 system remained constant up to 700 deg C. The RuO_2 thin films can operate as heat-resisting adhesion layers in Au thin films. Au thin films were highly oriented in the Au(111) plane.

机译：研究了RuO_2薄膜对稳定沉积在Al_2O_3衬底上的Au薄膜的热性能的影响。测量了薄层电阻和粘合强度对温度的依赖性。 Au / RuO_2体系的粘合强度随温度恒定，而Au / Pt / Ti体系的粘合强度随温度升高至400摄氏度以上而降低。Au/ RuO_2体系的粘合性能不受加热的影响且稳定。到800摄氏度。Au/ RuO_2系统的薄层电阻在700摄氏度之前保持恒定。RuO_2薄膜可以作为Au薄膜中的耐热粘合层。 Au薄膜在Au（111）平面中高度取向。

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《日本セラミックス協会学術論文誌》 |2001年第1270期|共2页
作者
Mitsuhiko MATSUI;
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正文语种 eng
中图分类陶瓷工业;
关键词
thin films; ruthenium oxide; gold; aluminum oxide; adhesion; sheet resistance; thermal stability;

机译：薄膜;氧化钌;金;氧化铝;附着力;薄层电阻;热稳定性;

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1. Thermal Stability of Au Thin Film Deposited on Al_2O_3 Substrate with RuO_2 Adhesion Layer [J] . Mitsuhiko MATSUI 日本セラミックス協会学術論文誌 . 2001,第1270期

机译：具有RuO_2粘附层的Al_2O_3衬底上沉积的Au薄膜的热稳定性
2. Enhanced stability of platinized silicon substrates using an unconventional adhesion layer deposited by CSD for high temperature dielectric thin film deposition [J] . S. HALDER, T. SCHNELLER, R. WASER Applied Physics. A, Materials Science & Processing . 2007,第4期

机译：使用CSD沉积的非常规粘合层提高铂介硅基板的稳定性，用于高温介电薄膜沉积
3. The effect of blocking layer of Al_2O_3 on thermal stability and electrical properties of HfO_2 dielectric films deposited on SiGe layer [J] . Xinhong Cheng, Dawei He, Zhaorui Song, Microelectronic Engineering . 2008,第9期

机译：Al_2O_3阻挡层对沉积在SiGe层上HfO_2介电膜的热稳定性和电性能的影响
4. A microstructural study of the thermal stability of atomic layer deposited Al_2O_3 thin films [C] . L Nistor, O Richard, C Zhao, Conference on microscopy of semiconducting materials . 2003

机译：原子层沉积Al_2O_3薄膜热稳定性的微观结构研究
5. The structure, optical behavior, and thermal stability of sputter-deposited hafnium dioxide single layer and hafnium dioxide-aluminum oxide nanolaminate thin-films. [D] . Hoppe, Elizabeth Ellen. 2009

机译：溅射沉积的二氧化f单层和二氧化ha-氧化铝纳米层压薄膜的结构，光学性能和热稳定性。
6. Phase Formation and High-Temperature Stability of Very Thin Co-Sputtered Ti-Al and Multilayered Ti/Al Films on Thermally Oxidized Si Substrates [O] . Marietta Seifert, Eric Lattner, Siegfried B. Menzel, 2020

机译：热氧化硅衬底上非常薄的共溅射Ti-Al和多层Ti / Al膜的相形成和高温稳定性
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8. Growth, structure, and thermal stability of vapor deposited ultra-thin metal films: Rh on Ag(100), Au on Pd(110), and Pt on Pd(110). [R] . Schmitz, P. 1990

机译：气相沉积的超薄金属膜的生长，结构和热稳定性：ag（100）上的Rh，pd（110）上的au和pd（110）上的pt。

Thermal Stability of Au Thin Film Deposited on Al_2O_3 Substrate with RuO_2 Adhesion Layer

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