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True atomic structures on the GaAs(001) surface growth by molecular beam epitaxy

机译：通过分子束外延生长在GaAs（001）表面上的真实原子结构

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摘要

Scanning tunneling microscopy (STM) andreflection high-energy diffraction (RHEED) have been used tostudy the atomic structures of the GaAs(001) surfaces grown bymolecular beam epitaxy (MBE). The (2×4)-α,β,γphases andthe c(4×4) phase have been investigated in a systematic manner,controlling the As Surface coverage. The high-resolution STMimages show that the 2×4-α,β, andγphases all have thesame unit structure in the outermost surface layer, whichconsists of two As dimers and two As dimer vacancies. Variousstructure models proposed for the 2×4 phases are examinedbased on the STM and RHEED observations as well asdynamical calculation of the RHEED spot intensities. As a resultwe have proposed the new structure model for the As-richGaAs(001) surface which is cosistent with most of theobservations reported. We also studied the 4×2 phase consistsof two Ga dimers on the top layer and another Ga dimer at thethird layer, and 4×6 phase accomodates the periodic array ofGa clusters at the 4×6 unit corner on top of the 4×2 phase.
机译：扫描隧道显微镜（STM）和反射高能衍射（RHEED）已用于研究分子束外延（MBE）生长的GaAs（001）表面的原子结构。通过控制As表面的覆盖范围，系统地研究了（2×4）-α，β，γ相和c（4×4）相。高分辨率STM图像显示2×4-α，β和γ相在最外层表面都具有相同的单元结构，由两个As二聚体和两个As二聚体空位组成。基于STM和RHEED观测以及RHEED点强度的动态计算，检查了为2×4相提出的各种结构模型。结果，我们提出了一种富砷GaAs（001）表面的新结构模型，该模型与大多数报道的观测结果一致。我们还研究了4×2相，它由顶层的两个Ga二聚体和第三层的另一个Ga二聚体组成，并且4×6相在4×2相顶部的4×6单元角处容纳了Ga簇的周期性阵列。

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