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Atomic structures on a GaAs(001) surface grown by molecular beam epitaxy

机译：通过分子束外延生长的GaAs（001）表面上的原子结构

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摘要

A unique apparatus for in-situ atomic-resolution study of solid state structures grown by molecular beam epitaxy (MBE) is developed, in which a scanning tunneling microscope (STM) is combined with an MBE chamber within the same vacuum system. The utility of the apparatus is demonstrated by examining atomic structures on a molecular-beam-epitaxial GaAs(001) surface over a wide range of [As]/[Ga] ratios. By varying the As surface coverage, the 2×4 — α, β, γ and c(4×4) phases are examined in detail. High-resolution STM images indicate that 2×4 — α, β, and γ phases in the outermost surface layer have essentially the same unit cell consisting of two As dimers and two As dimer vacancies. Using the STM images, reflection high-energy electron diffraction (RHEED) patterns and dynamical RHEED calculations, the existing structural models for the 2×4 phases are analysed and a new model of the As-rich GaAs(001) surface is proposed, found to be consistent with most of the previous observations.
机译：开发了一种用于通过分子束外延（MBE）生长的固态结构进行原位原子分辨率研究的独特设备，其中在同一真空系统中将扫描隧道显微镜（STM）与MBE腔室结合在一起。通过检查分子束外延GaAs（001）表面上[As] / [Ga]比的宽范围内的原子结构，证明了该装置的实用性。通过改变As的表面覆盖率，详细检查2×4-α，β，γ和c（4×4）相。高分辨率STM图像显示，最外层表面层中的2×4-α，β和γ相具有基本相同的晶胞，该晶胞由两个As二聚体和两个As二聚体空位组成。利用STM图像，反射高能电子衍射（RHEED）模式和动态RHEED计算，分析了现有的2×4相结构模型，并提出了富砷GaAs（001）表面的新模型。与之前的大多数观察结果一致。

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