Ion-irradiated In0.53Ga0.47As photoconductive antennas for THz generation and detection at 1.55 mu m wavelength

Mangeney J; Crozat P

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Ion-irradiated In0.53Ga0.47As photoconductive antennas for THz generation and detection at 1.55 mu m wavelength

机译：离子辐照的In0.53Ga0.47As光电导天线，用于在1.55μm波长下产生和检测THz

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We present a detailed study of the photoconductive antennas made from heavy-ion-irradiated In0.53Ga0.47As material. The optical and transport properties of ion-irradiated In0.53Ga0.47As material are characterized. The terahertz waveforms emitted and detected by ion-irradiated In0.53Ga0.47As photoconductive antennas excited by 1.55 mu m wavelength femtosecond laser pulses are reported and the effect of the carrier lifetime on the terahertz signal characteristics emitted by such devices is analysed. The performances of ion-irradiated In0.53Ga0.47As photoconductive antennas excited by 1.55 mu m and also by 0.8 mu m wavelength fermosecond laser pulses are compared to those of similar low-temperature-grown GaAs photoconductive antennas.

机译：我们目前对由重离子辐照的In0.53Ga0.47As材料制成的光电导天线进行详细研究。表征了离子辐照的In0.53Ga0.47As材料的光学和传输性质。报告了用离子辐照的In0.53Ga0.47As光电辐射天线发射和检测的太赫兹波形，该天线被1.55μm波长的飞秒激光脉冲激发，并分析了载流子寿命对此类设备发射的太赫兹信号特性的影响。将用离子辐照的In0.53Ga0.47As光电导天线的性能（以1.55μm波长和0.8μm波长的费秒激光脉冲激发）与类似的低温生长GaAs光电导天线进行了比较。

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《Comptes rendus. Physique》 |2008年第2期|共11页
作者
Mangeney J; Crozat P;
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正文语种 eng
中图分类物理学;
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terahertz; photoconductive antenna; femtosecond optical pulse; telecommunication wavelength; ionic irradiation; ULTRABROADBAND TERAHERTZ RADIATION; TEMPERATURE-GROWN GAAS; EMISSION CHARACTERISTICS; CARRIER LIFETIME; INGAAS; EMITTERS; INP; SUBPICOSECOND; OPTIMIZATION; ABSORPTION;

机译：太赫兹;光电导天线;飞秒光脉冲;电信波长;离子辐照;超宽带TERAHERTZ辐射;温度增长的GAAS;发射特性;载流子寿命;INGAAS;发射体;INP;亚微米级;优化;吸收;

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1. Ion-irradiated In0.53Ga0.47As photoconductive antennas for THz generation and detection at 1.55 mu m wavelength [J] . Mangeney J, Crozat P Comptes rendus. Physique . 2008,第2期

机译：离子辐照的In0.53Ga0.47As光电导天线，用于在1.55μm波长下产生和检测THz
2. Terahertz Generation and Detection Using Low Temperature Grown InGaAs-InAlAs Photoconductive Antennas at 1.55 src="/images/tex/1025.gif" alt="mu{hbox {m}}"> Pulse Excitation [J] . Kostakis I., Saeedkia D., Missous M. Terahertz Science and Technology, IEEE Transactions on . 2012,第6期

机译：使用1.55的低温生长InGaAs-InAlAs光电导天线进行太赫兹的产生和检测 src =“ / images / tex / 1025.gif” alt =“ mu {hbox {m}}”> / formula>脉冲激励
3. Continuous wave terahertz generation up to 2 THz by photomixing on ion-irradiated ln_(0.53)Ga_(0.47)As at 1.55 μm wavelengths [J] . J. Mangeney, A. Merigault, N. Zerounian, Applied Physics Letters . 2007,第24期

机译：通过在波长为1.55μm的离子辐照ln_（0.53）Ga_（0.47）As上进行光混合，可产生高达2 THz的连续波太赫兹
4. CW THz generation by In0.53Ga0.47As photomixer with TEM-Horn antenna driven at 1.55 µm wavelengths [C] . Mangeney J., Meng F., Gacemi D., 35th International Conference on Infrared Millimeter and Terahertz Waves . 2010

机译：由In0.53Ga0.47As光混频器产生的CW THz，采用TEM-Horn天线驱动，波长为1.55 µm
5. 1.55 microm Indium Gallium Arsenide THz Synchronized Photoconductive Switch Array. [D] . Williams, Kimani K. 2012

机译：1.55微米砷化铟镓太赫兹同步光电导开关阵列。
6. Up to 70 THz bandwidth from an implanted Ge photoconductive antenna excited by a femtosecond Er:fibre laser [O] . Abhishek Singh, Alexej Pashkin, Stephan Winnerl, 2020

机译：飞秒Er：光纤激光器激发的植入式Ge光电导天线的带宽高达70 THz
7. Measurement and modeling of ErAs:In0.53Ga0.47As nanocomposite photoconductivity for THz generation at 1.55 μm pump wavelength [O] . J. Y. Suen, P. R. Krogen, S. Preu, 2014

机译：ERAS的测量和建模：IN0.53GA0.47AS在1.55μm泵波长下的THz产生的纳米复合光电电导性
8. Laser Radar 1996, Final Report. (Coherent and Direct Detection Laser Radars at1.55 mu m) (Slutrapport Laserradar 1996 (Koherent och Direktdetekterande Laser Radar vid 1.55 mu m)) [R] . Karlsson, C., Letalick, D. 1997

机译：激光雷达1996年，最终报告。（1.55微米的相干和直接探测激光雷达）（slutrapport Laserradar 1996（Koherent och Direktdetekterande Laser Radar vid1.55μm））

Ion-irradiated In0.53Ga0.47As photoconductive antennas for THz generation and detection at 1.55 mu m wavelength

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