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The phase structure and electric properties of low-temperature sintered (K, Na)NbO_3-based piezoceramics modified by CuO

机译:CuO修饰的低温烧结(K,Na)NbO_3基压电陶瓷的相结构和电性能

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摘要

0.25 wt% CuO-doped (Li,K,Na)(Nb,Ta)O_3-AgSbO_3 lead-free piezoceramics with pure perovskite structure were successfully prepared at a sintering temperature below 1000 °C. The sintering temperature of KNN-based piezoceramics was effectively reduced by about 100 °C due to the enhanced densification process induced by the addition of CuO. Besides, the acceptable sintering temperature window was broadened by the addition of CuO. It is found that the CuO-doped samples show slightly higher tetragonal-orthorhombic phase transition point (T_(T_O)) but a lower Curie point (T_c), compared to undoped ones. The KNN-based piezoceramics became "hard" as CuO was added, supported by an increase of Q_m. Fairly good electrical properties of d_(33)~*=383 pm/V, ε_r=860, Q_m= 188 and T_c=2l5 °C could be obtained in dense CuO-modified KNN-based piezoceramics sintered at 970 °C, demonstrating promising potential in practical applications.
机译:在低于1000°C的烧结温度下成功制备了0.25 wt%的掺杂纯LiO的(Li,K,Na)(Nb,Ta)O_3-AgSbO_3无铅压电陶瓷。 KNO基压电陶瓷的烧结温度有效降低了约100°C,这归因于添加CuO引起的致密化过程的增强。此外,通过添加CuO扩大了可接受的烧结温度范围。发现与未掺杂的样品相比,掺杂CuO的样品显示出略高的四方-斜方晶相变点(T_(T_O))但具有较低的居里点(T_c)。随着Q_m的增加,随着添加CuO,基于KNN的压电陶瓷变得“坚硬”。在致密的CuO改性KNN基压电陶瓷中烧结970°C可获得d_(33)〜* = 383 pm / V,ε_r= 860,Q_m = 188和T_c = 2l5°C的相当好的电性能,这表明有希望在实际应用中的潜力。

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