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首页> 外文期刊>Chemistry: A European journal >Synthesis of highly n-type graphene by using an ionic liquid
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Synthesis of highly n-type graphene by using an ionic liquid

机译：利用离子液体合成高n型石墨烯

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A new N-doped reduced graphene oxide(rGO) field effect transistor(FET) was designed by using an amine-terminated ionic liquids(IL)(1-(3-aminopropyl)-3-methylimidazolium bromide(IL-NH2)) that has a high boiling point. GO was prepared from natural graphite powder by the modified method by Hummers and Offenman using sulfuric acid, potassium permanganate, and sodium nitrate. In the high-resolution scan, the asymmetric N1s XPS spectrum of PrGO-IL was divided into four components, indicating that nitrogen atoms attached to the rGO network were in four different binding states. The intensity ratio of the PrGO-IL and samples subjected to annealing at 400 to 800°C increases from 0.87 to 1.02, indicating an increased disorder. A lower resistance is observed for the as-prepared device prepared by annealing at 800°C compared with the device annealed at 400°C because higher annealing temperatures yielded more effective reduction.
机译：利用胺端基离子液体（IL）（1-（3-氨基丙基）-3-甲基咪唑鎓溴化物（IL-NH2））设计了一种新型的N掺杂还原氧化石墨烯（rGO）场效应晶体管（FET）。沸点高GO采用Hummers和Offenman的改良方法，使用硫酸，高锰酸钾和硝酸钠，由天然石墨粉制成。在高分辨率扫描中，PrGO-IL的不对称N1s XPS光谱分为四个成分，表明连接到rGO网络的氮原子处于四个不同的结合状态。 PrGO-IL和在400至800°C退火的样品的强度比从0.87增加到1.02，表明无序增加。与在400°C退火的器件相比，在800°C退火制备的器件的电阻更低，因为更高的退火温度可以更有效地还原。

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