Preferential Formation of Si-O-C over Si-C Linkage upon Thermal Grafting on Hydrogen-Terminated Silicon (111)

Khung Yit Lung; Ngalim Siti Hawa; Meda Laura; Narducci Dario

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Preferential Formation of Si-O-C over Si-C Linkage upon Thermal Grafting on Hydrogen-Terminated Silicon (111)

机译：在氢封端的硅（111）上进行热接枝时，在Si-C键上优先形成Si-O-C

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In a stringent and near oxygen-free environment, SiH surfaces were introduced to a trifluoroalkyne, an alcohol-derivatized alkyne, as well as an equal mixture of both alkynes at a temperature of 130 degrees C. Contact angle measurements, high-resolution X-ray photoelectron spectroscopy (XPS), and angle-resolved XPS were performed to examine the system. SiH surfaces were found to have a strong preference towards the formation of SiOC rather than SiC bonds when the alcohol and alkyne reactivities were compared.

机译：在严格且接近无氧的环境中，将SiH表面引入三氟炔烃，一种醇衍生的炔烃，以及两种炔烃的均等混合物，温度为130摄氏度。接触角测量，高分辨率X-射线射线光电子能谱（XPS）和角度分辨XPS进行了检查。当比较酒精和炔烃的反应性时，发现SiH表面更倾向于形成SiOC而不是SiC键。

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《Chemistry: A European journal》 |2014年第46期|共8页
作者
Khung Yit Lung; Ngalim Siti Hawa; Meda Laura; Narducci Dario;
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正文语种 eng
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关键词
alkynes; contact angle; hydrosilylation; silicon; surface chemistry;

机译：炔烃;接触角;硅烷化;硅;表面化学;

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1. Preferential Formation of Si-O-C over Si-C Linkage upon Thermal Grafting on Hydrogen-Terminated Silicon (111) [J] . Khung Yit Lung, Ngalim Siti Hawa, Meda Laura, Chemistry: A European journal . 2014,第46期

机译：在氢封端的硅（111）上进行热接枝时，在Si-C键上优先形成Si-O-C
2. Photoanodic formation of an organic monolayer on a hydrogen-terminated Si(111) surface via Si-C covalent bond using a Grignard reagent and its application for one-step monolayer-patterning [J] . Takakusagi S, Miyasaka T, Uosaki K Journal of Electroanalytical Chemistry: An International Journal Devoted to All Aspects of Electrode Kinetics, Interfacial Structure, Properties of Electrolytes, Colloid and Biological Electrochemistry . 2007,第2期

机译：格氏试剂通过硅碳共价键在氢封端的Si（111）表面上形成有机单层的阳极阳极及其在一步式单层构图中的应用
3. Construction of a metal-organic monolayer-semiconductor junction on a hydrogen-terminated Si(III) surface via Si-C covalent linkage and its electrical properties [J] . K. Uosaki, H. Fukumitsu, T. Masuda Physical chemistry chemical physics: PCCP . 2014,第21期

机译：通过Si-C共价键在氢封端的Si（III）表面上构建金属-有机单层-半导体结及其电性能
4. Controlled grafting of well-defined functional polymers on hydrogen-terminated silicon substrates: Relevance to adhesion of electrolessly-deposited copper [C] . W.H. YU, E.T. KANG, K.G. NEOH International Symposium on Polymer Surface Modification . 2004

机译：在氢封端硅基衬底上受到明确的官能聚合物的嫁接：与无电沉积铜的粘合性的相关性
5. Multi-valley physics of two-dimensional electron systems on hydrogen-terminated silicon (111) surfaces [D] . McFarland, Robert Nicholas 2010

机译：氢封端硅（111）表面上二维电子系统的多谷物理
6. Formation of stable Si–O–C submonolayers on hydrogen-terminated silicon(111) under low-temperature conditions [O] . Yit Lung Khung, Siti Hawa Ngalim, Andrea Scaccabarozzi, 2015

机译：低温条件下在氢封端的硅（111）上形成稳定的Si-O-C亚单层
7. Formation of stable Si–O–C submonolayers on hydrogen-terminated silicon(111) under low-temperature conditions [O] . Yit Lung Khung, Siti Hawa Ngalim, Andrea Scaccabarozzi, 2015

机译：在低温条件下在氢封端的硅（111）上形成稳定的si-O-C亚单层
8. Investigation of Si-SiO2 Interface Charges in Thermally Oxidized (100), (110),(111), (511) Silicon [R] . Vitkavage, S. C., Irene, E. A., Massoud, H. Z. 1990

机译：热氧化（100），（110），（111），（511）硅中si-siO2界面电荷的研究

Preferential Formation of Si-O-C over Si-C Linkage upon Thermal Grafting on Hydrogen-Terminated Silicon (111)

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