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首页> 外文期刊>ACS applied materials & interfaces >Tunable Surface Structuration of Silicon by Metal Assisted Chemical Etching with Pt Nanoparticles under Electrochemical Bias
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Tunable Surface Structuration of Silicon by Metal Assisted Chemical Etching with Pt Nanoparticles under Electrochemical Bias

机译：电化学偏压下Pt纳米粒子金属辅助化学刻蚀可调谐硅的表面结构

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摘要

An in-depth study of metal assisted chemical etching (MACE) of p-type c-Si in HF/H2O2 aqueous solutions using Pt nanoparticles as catalysts is presented. Combination of cyclic voltammetry, open circuit measurements, chronoamperometry, impedance spectroscopy, and 2D band bending modeling of the metal/semiconductor/electrolyte interfaces at the nanoscale and under different etching conditions allows gaining physical insights into this system. Additionally, in an attempt to mimic the etching conditions, the modeling has been performed with a positively biased nanoparticle buried in the Si substrate. Following these findings, the application of an external polarization during etching is introduced as a novel efficient approach for achieving straightforward control of the pore morphology by acting upon the band bending at the Si/electrolyte junction. In this way, nanostructures ranging from straight mesopores to cone-shaped macropores are obtained as the Si sample is biased from negative to positive potentials. Remarkably, macroscopic cone-shaped pores in the 1-5 mu m size range with a high aspect ratio (L/W similar to 1.6) are obtained by this method. This morphology leads to a reduction of the surface reflectance below 5% over the entire VIS-NIR domain, which outperforms macrostructures made by state of the art texturization techniques for Si solar cells.
机译：深入研究了以Pt纳米粒子为催化剂的HF / H2O2水溶液中p型c-Si的金属辅助化学刻蚀（MACE）。循环伏安法，开路测量，计时安培法，阻抗谱法和金属/半导体/电解质界面在纳米级和不同蚀刻条件下的2D带弯曲建模相结合，可以深入了解该系统。另外，为了模仿蚀刻条件，已经用掩埋在Si衬底中的正偏压纳米颗粒进行了建模。根据这些发现，在蚀刻过程中引入外部极化是一种新颖的有效方法，可通过作用于Si /电解质结的能带弯曲来实现对孔形态的直接控制。以此方式，当Si样品从负电势偏置到正电势时，获得了从直中孔到锥形大孔的纳米结构。显着地，通过该方法获得了具有高长宽比（L / W类似于1.6）的1-5μm尺寸范围的宏观锥形孔。这种形态导致整个VIS-NIR域的表面反射率降低到5％以下，这优于通过现有技术的硅太阳能电池纹理化技术制成的宏观结构。

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