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首页> 外文期刊>ACS applied materials & interfaces >Dislocation Reduction and Stress Relaxation of GaN and InGaN Multiple Quantum Wells with Improved Performance via Serpentine Channel Patterned Mask
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Dislocation Reduction and Stress Relaxation of GaN and InGaN Multiple Quantum Wells with Improved Performance via Serpentine Channel Patterned Mask

机译：通过蛇形沟道图案化掩模改善性能的GaN和InGaN多量子阱的位错减少和应力松弛

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摘要

The existence of high threading dislocation density (TDD) in GaN-based epilayers is a long unsolved problem, which hinders further applications of defect-sensitive GaN-based devices. Multiple-modulation of epitaxial lateral overgrowth (ELOG) is used to achieve high-quality GaN template on a novel serpentine channel patterned sapphire substrate (SCPSS). The dislocation blocking brought by the serpentine channel patterned mask, coupled with repeated dislocation bending, can reduce the dislocation density to a yet-to-be-optimized level of similar to 2 X 10(5) to 2 X 10(6) cm(-2). About 80% area utilization rate of GaN with low TDD and stress relaxation is obtained. The periodical variations of dislocation density, optical properties and residual stress in GaN-based epilayers on SCPSS are analyzed. The quantum efficiency of InGaN/GaN multiple quantum wells (MQWs) on it can be increased by 52% compared with the conventional sapphire substrate. The reduced nonradiative recombination centers, the enhanced carrier localization, and the suppressed quantum confined Stark effect, are the main determinants of improved luminous performance in MQWs on SCPSS. This developed ELOG on serpentine shaped mask needs no interruption and regrowth, which can be a promising candidate for the heteroepitaxy of semipolaronpolar GaN and GaAs with high quality.
机译：GaN基外延层中高螺纹位错密度（TDD）的存在是一个长期未解决的问题，这阻碍了对缺陷敏感的GaN基器件的进一步应用。外延横向过度生长（ELOG）的多重调制用于在新型蛇形通道图案蓝宝石衬底（SCPSS）上获得高质量的GaN模板。蛇形通道图案化掩模带来的位错阻挡，再加上反复的位错弯曲，可以将位错密度降低到尚未优化的水平，类似于2 X 10（5）至2 X 10（6）cm（ -2）。具有低TDD和应力松弛的GaN的面积利用率约为80％。分析了SCPSS上GaN基外延层中位错密度，光学特性和残余应力的周期性变化。与传统的蓝宝石衬底相比，其上的InGaN / GaN多量子阱（MQW）的量子效率可提高52％。减少的非辐射复合中心，增强的载流子定位和抑制的量子限制斯塔克效应，是决定SCPSS上MQW发光性能提高的主要决定因素。这种在蛇形掩模上开发的ELOG不需要中断和再生长，这可以成为高质量的半极性/非极性GaN和GaAs异质外延的有希望的候选者。

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