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首页> 外文期刊>ACS applied materials & interfaces >High-Performance MoS2/CuO Nanosheet-on-One-Dimensional Heterojunction Photodetectors
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High-Performance MoS2/CuO Nanosheet-on-One-Dimensional Heterojunction Photodetectors

机译：高性能MoS2 / CuO纳米一维异质结光电探测器

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摘要

van der Waals heterostructures based on stacked two-dimensional (2D) materials provide novel device structures enabling high-performance electronic and optoelectronic devices. While 2D-2D or 2D bulk heterostructures have been largely explored for fundamental understanding and novel device applications, 2D one-dimensional (1D) heterostructures have been rarely studied because of the difficulty in achieving high-quality heterojunctions between 2D and 1D structures. In this study, we introduce nanosheet-on-1D van der Wags heterostructure photodetectors based on a wet-transfer printing of a MoS2 nanosheet on top of a CuO nanowire (NW). MoS2/CuO nanosheet-on-1D photodetectors show an excellent photocurrent rectification ratio with an ideality factor of 1.37, which indicates the formation of an atomically sharp interface and a high-quality heterojunction in the MoS2/CuO heterostructure by wet-transfer-enhanced van der Waals bonding. Furthermore, nanosheet-on-1D heterojunction photodetectors exhibit excellent photodetection capabilities with an ultrahigh photoresponsivity (similar to 157.6 A/W), a high rectification ratio (similar to 6000 at +/- 2 V), a low dark current (similar to 38 fA at -2 V), and a fast photoresponse time (similar to 34.6 and 51.9 ms of rise and decay time), which cannot be achievable with 1D-on-nanosheet heterojunction photodetectors. The wet transfer printing of nanosheet-on-1D heterostructures introduced in this study provides a robust platform for the fundamental study of various combinations of 2D-on-1D heterostructures and their applications in novel heterojunction devices.
机译：基于堆叠式二维（2D）材料的范德华力异质结构提供了新颖的器件结构，可实现高性能的电子和光电器件。尽管已对2D-2D或2D本体异质结构进行了广泛的研究以获取基本知识和新颖的设备应用，但由于难以在2D和1D结构之间实现高质量的异质结，因此很少研究2D一维（1D）异质结构。在这项研究中，我们介绍了基于MoS2纳米片在CuO纳米线（NW）顶部的湿转移印刷的纳米片上1D范德瓦兹异质结构光电探测器。 MoS2 / CuO纳米on-on-1D光电探测器显示出优异的光电流整流比，理想因子为1.37，这表明通过湿转移增强的van在MoS2 / CuO异质结构中形成了原子锐利的界面和高质量的异质结。 der Waals粘合。此外，纳米片上1D异质结光电探测器具有出色的光电探测能力，具有超高的光响应性（约157.6 A / W），高整流比（约+/- 2 V时约6000），低暗电流（约38）。 fA在-2 V时）和快速的光响应时间（类似于34.6和51.9 ms的上升和衰减时间），这是一维纳米薄片异质结光电检测器无法实现的。这项研究中引入的纳米片上1D异质结构的湿转移印刷为基础研究2D上1D异质结构的各种组合及其在新型异质结器件中的应用提供了一个可靠的平台。

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