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Analysis of the birefringence of a silicon-on-insulator rib waveguide

机译:绝缘体上硅肋形波导的双折射分析

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摘要

A detailed analysis of the polarization characteristics (birefringence) of a silicon-on-insulator (SOI) rib waveguide is given. The fundamental TE- and TM-polarized modes of the SOI rib waveguide are calculated by a semivectorial finite-difference method. The rib width and the slab height of the SOI rib waveguide are normalized with respect to the total height of the silicon layer. A general relation between the two normalized parameters for a nonbirefringent SOI rib waveguide is obtained. According to this relation a nonbirefringent SOI rib waveguide can easily be designed. The fabrication tolerance for a nonbirefringent SOI rib waveguide is also analyzed, revealing that the tolerance can be increased by use of a larger total height of the silicon layer.
机译:给出了绝缘体上硅(SOI)肋形波导的偏振特性(双折射)的详细分析。 SOI肋形波导的基本TE和TM偏振模是通过半矢量有限差分法计算的。相对于硅层的总高度将SOI肋状波导的肋状宽度和平板高度标准化。获得了用于非双折射SOI肋形波导的两个归一化参数之间的一般关系。根据该关系,可以容易地设计非双折射SOI肋状波导。还分析了非双折射SOI肋形波导的制造公差,发现可以通过使用更大的硅层总高度来提高公差。

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