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首页> 外文期刊>Applied optics >Effect of high-energy electron-beam irradiation on the optical properties of ion-beam-sputtered silicon oxynitride thin films
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Effect of high-energy electron-beam irradiation on the optical properties of ion-beam-sputtered silicon oxynitride thin films

机译：高能电子束辐照对离子束溅射氧氮化硅薄膜光学性能的影响

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Silicon oxynitride thin films are prepared by ion-beam sputtering, and the optical properties and surface chemical composition are studied by spectrophotometric and x-ray photoelectron spectroscopy, respectively. It is seen that the films sputtered by use of nitrogen alone as the sputtering species from a silicon nitride target are completely transparent (k < 0.005) and have a refractive-index dispersion from 1.85 to 1.71 over the visible and near-infrared spectral regions, and the films show distinct spectral lines that are due to silicon, Si(2s), nitrogen, N(1s), and oxygen, O(1s). Sputter deposition of argon and of argon and nitrogen produces silicon-rich silicon oxynitride films that are absorbent and have high refractive indices. These films have a direct electronic transition, with a threshold energy of 1.75 eV. Electron irradiation transforms optically transparent silicon oxynitride films into silicon-rich silicon oxynitride films that have higher refractive indices and are optically absorbing owing to the presence of nonsaturated silicon in the irradiated films. The degradation in current responsivity of silicon photodetectors, under electron irradiation, is within 3percent over the wavelength region from 450 to 750 nm, which is entirely due to the degradation of optical properties of silicon oxynitride antireflection coatings.
机译：通过离子束溅射制备氮氧化硅薄膜，并分别通过分光光度法和X射线光电子能谱研究光学性质和表面化学组成。可以看出，仅使用氮气作为氮化硅靶的溅射物质溅射的薄膜是完全透明的（k <0.005），并且在可见光和近红外光谱区域的折射率色散为1.85至1.71，薄膜显示出不同的光谱线，这是由于硅，Si（2s），氮，N（1s）和氧O（1s）引起的。氩，氩和氮的溅射沉积产生富硅的氮氧化硅膜，该膜具有吸收性并具有高折射率。这些薄膜具有直接电子跃迁，其阈值能量为1.75 eV。电子辐照将光学透明的氮氧化硅膜转变成富硅的氮氧化硅膜，该膜具有较高的折射率并且由于被辐照的膜中存在不饱和硅而具有光学吸收性。在电子辐照下，硅光电探测器的电流响应性下降在450至750 nm的整个波长范围内都在3％以内，这完全是由于氮氧化硅减反射膜的光学性能下降所致。

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