• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Applied optics >Lithographic characterization of the spherical error in an extreme-ultraviolet optic by use of a programmable pupil-fill illuminator
【24h】

Lithographic characterization of the spherical error in an extreme-ultraviolet optic by use of a programmable pupil-fill illuminator

机译：使用可编程的瞳孔填充照明器对极紫外光学器件中的球面误差进行光刻表征

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Extreme-ultraviolet (EUV) lithography remains a leading contender for use in the mass production of nanoelectronics at the 32 nm node. Great progress has been made in all areas of EUV lithography, including the crucial issue of fabrication of diffraction-limited optics. To gain an accurate understanding of the projection optic wavefront error in a completed lithography tool requires lithography-based aberration measurements; however, making such measurements in EUV systems can be challenging. We describe the quantitative lithographic measurement of spherical aberration in a 0.3 numerical aperture. EUV microfield optic. The measurement method is based on use of the unique properties of a programmable coherence illuminator. The results show the optic to have 1 nm rms spherical error, whereas interferometric measurements performed during the alignment of the optic indicated a spherical error of less than 0.1 nm rms.
机译：极紫外（EUV）光刻技术仍然是在32 nm节点上大规模生产纳米电子技术的主要竞争者。 EUV光刻的所有领域都取得了巨大进展，包括制造衍射极限光学器件的关键问题。为了在完整的光刻工具中准确了解投影光学波前误差，需要进行基于光刻的像差测量。但是，在EUV系统中进行此类测量可能具有挑战性。我们描述了在0.3数值孔径中球差的定量光刻技术。 EUV显微光学器件。测量方法基于可编程相干照明器的独特特性。结果显示光学器件具有1 nm rms的球面误差，而在光学器件对准过程中进行的干涉测量表明球形误差小于0.1 nm rms。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号