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Semiconductor quantum-well saturable absorbers for efficient passive Q switching of a diode-pumped 946 nm Nd:YAG laser

机译:半导体量子阱可饱和吸收器,用于二极管泵浦的946 nm Nd:YAG激光器的有效无源Q转换

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摘要

InGaAs quantum wells and a Bragg mirror structure are grown on a GaAs substrate to simultaneouslyserve as a low-loss saturable absorber and an output coupler for highly efficient Q switching of a diode-pumped Nd:YAG laser operating at 946 nm. With an incident pump power of 9.2 W, the laser produces pulses of 38 ns duration with average pulse energy of as much as 20 (mu)J at a pulse repetition rate of 55 kHz.
机译:InGaAs量子阱和Bragg镜结构生长在GaAs衬底上,同时用作低损耗可饱和吸收体和输出耦合器,用于对946 nm工作的二极管泵浦Nd:YAG激光器进行高效Q转换。在9.2 W的入射泵浦功率下,激光以55 kHz的脉冲重复频率产生38 ns持续时间的脉冲,平均脉冲能量高达20μJ。

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