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Laser damage study of nodules in electron-beam-evaporated HfO_(2)/SiO_(2) high reflectors

机译:电子束蒸发的HfO_(2)/ SiO_(2)高反射镜中结核的激光损伤研究

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摘要

A reactive electron beam evaporation process was used to fabricate 1.064 (mu)m HfO_(2)/SiO_(2) high reflectors. The deposition process was optimized to reduce the nodular density. Cross-sectioning of nodular defects by a focused ion-beam milling instrument showed that the nodule seeds were the residual particles on the substrate and the particulates from the silica source "splitting." After optimizing the substrate preparation procedure and the evaporation process, a low nodular density of 2.7/mm~(2) was achieved. The laser damage test revealed that the ejection fluences and damage growth behaviors of nodules created from deep or shallow seeds were totally different. A mechanism based on directional plasma scald was proposed to interpret observed damage growth phenomenon.
机译:使用反应性电子束蒸发工艺来制造1.064μm的HfO_(2)/ SiO_(2)高反射器。优化沉积工艺以降低结节密度。用聚焦离子束研磨仪对结核缺陷的横截面表明,结核种子是基质上的残留颗粒,而二氧化硅来源的颗粒则“分裂”。优化了基板制备工艺和蒸发工艺后,结节密度低至2.7 / mm〜(2)。激光损伤试验表明,由深或浅种子产生的结节的喷射通量和损伤生长行为完全不同。提出了一种基于定向等离子体烫伤的机理来解释观察到的损伤增长现象。

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