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Cavity-enhanced measurements for determining dielectric-membrane thickness and complex index of refraction

机译：用于确定介电膜厚度和复折射率的腔增强测量

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The material properties of silicon nitride (SiN) play an important role in the performance of SiN membranes used in optomechanical applications. An optimum design of a subwavelength high-contrast grating requires accurate knowledge of the membrane thickness and index of refraction, and its performance is ultimately limited by material absorption. Here we describe a cavity-enhanced method to measure the thickness and complex index of refraction of dielectric membranes with small, but nonzero, absorption coefficients. By determining Brewster's angle and an angle at which reflection is minimized by means of destructive interference, both the real part of the index of refraction and the sample thickness can be measured. A comparison of the losses in the empty cavity and the cavity containing the dielectric sample provides a measurement of the absorption.
机译：氮化硅（SiN）的材料特性在光机械应用中使用的SiN膜的性能中起着重要作用。亚波长高对比度光栅的最佳设计需要准确了解膜厚度和折射率，其性能最终会受到材料吸收的限制。在这里，我们描述了一种腔增强方法，用于测量吸收系数较小但非零的介电膜的厚度和复杂的折射率。通过确定布儒斯特角和借助相消干涉将反射最小化的角度，可以测量折射率的实部和样品厚度。比较空腔和包含电介质样品的腔中的损耗，可以测量吸收率。

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