• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Applied optics >Aspect ratio engineering of microlens arrays in thin-film flip-chip light-emitting diodes
【24h】

Aspect ratio engineering of microlens arrays in thin-film flip-chip light-emitting diodes

机译：薄膜倒装芯片发光二极管中微透镜阵列的长宽比工程

获取原文
获取原文并翻译 | 示例
       
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Light extraction efficiency of thin-film flip-chip InGaN-based light-emitting diodes (LEDs) with a TiO2 microlens arrays was calculated by employing the finite-difference time-domain method. The microlens arrays, formed by embedding hexagonal close-packed TiO2 sphere arrays in a polystyrene (PS) layer, were placed on top of the InGaN LED to serve as an intermediate medium for light extraction. By tuning the thickness of the PS layer, in-coupling and out-coupling efficiencies were optimized to achieve maximum light extraction efficiency. A thicker PS layer resulted in higher in-coupling efficiency, while a thinner PS layer led to higher out-coupling efficiency. Thus, the maximum light extraction efficiency becomes a trade-off between in-coupling and out-coupling efficiency. In addition, the cavity formed by the PS layer also affects light extraction from the LED. Our study reveals that a maximum light extraction efficiency of 86% was achievable by tuning PS thickness to 75 nm with maximized in-coupling and out-coupling efficiency accompanied by the optimized resonant cavity condition. (C) 2015 Optical Society of America
机译：采用有限差分时域方法计算了具有TiO2微透镜阵列的薄膜倒装芯片InGaN基发光二极管（LED）的光提取效率。通过将六边形密堆积的TiO2球形阵列嵌入聚苯乙烯（PS）层中而形成的微透镜阵列放置在InGaN LED的顶部，用作光提取的中间介质。通过调整PS层的厚度，优化了内耦合和外耦合效率，以实现最大的光提取效率。 PS层越厚，耦合效率越高，而PS层越薄，耦合输出效率越高。因此，最大光提取效率成为入耦合效率和出耦合效率之间的折衷。另外，由PS层形成的空腔也影响从LED提取光。我们的研究表明，通过将PS厚度调整至75 nm，同时具有最佳的内耦合和外耦合效率以及优化的谐振腔条件，可以实现86％的最大光提取效率。 （C）2015年美国眼镜学会

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号