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Passively Q-switched mode locking performance of Nd:GdTaO4 crystal by MoS2 saturable absorber at 1066 nm

机译:MoS2饱和吸收体在1066 nm处对Nd:GdTaO4晶体的被动Q开关锁模性能

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Passively Q-switched mode-locking performance of Nd:GdTaO4 crystal using molybdenum disulfide (MoS2) as a saturable absorber at 1066 nm was demonstrated for the first time. The MoS2 saturable absorber was prepared simply by transferring the MoS2 suspension onto a quartz substrate. By inserting the MoS2 saturable absorber into the Nd: GdTaO4 laser, stable Q-switched modelocked operation can be achieved. At the pump power of 4 W, the maximum average output power of 0.156 W was obtained with the optical conversion efficiency of 3.9%. (C) 2015 Optical Society of America
机译:首次展示了使用二硫化钼(MoS2)作为可饱和吸收剂的Nd:GdTaO4晶体的被动Q开关锁模性能。只需将MoS2悬浮液转移到石英衬底上即可制备MoS2可饱和吸收剂。通过将MoS2饱和吸收剂插入Nd:GdTaO4激光器,可以实现稳定的Q开关锁模操作。在4 W的泵浦功率下,获得的最大平均输出功率为0.156 W,光转换效率为3.9%。 (C)2015年美国眼镜学会

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