• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Applied optics >Near-infrared imaging system for nondestructive inspection of micro-crack in wafer through dicing tape
【24h】

Near-infrared imaging system for nondestructive inspection of micro-crack in wafer through dicing tape

机译：通过切割带对晶圆中的微裂纹进行无损检测的近红外成像系统

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Detection of wafer/die crack after the wafer dicing process is important for yield rate control prior to packaging. The traditional approach of microscopic examination is done after the dies are stripped from the dicing tape, and further crack propagation could result from this pick-and-place process. An on-tape crack inspection technique is proposed in this paper so that the crack from the dicing process can be clearly identified. The issues of seeing through the silicon substrate and the scattering at the dicing tape have been resolved, respectively, using a near-infrared wavelength of 1100 nm for illumination and using a feeding index matching liquid for filling the rough surface of the tape. Both the illumination and imaging optics of the inspection system have been designed and simulated with a ray-tracing program, and the prototype demonstrates the ability of seeing through the silicon substrate and dicing tape as well as detecting micro-crack down to 1.25 mu m, whose resolution is sufficient for most applications of die crack inspection. (C) 2015 Optical Society of America
机译：在晶片切割过程之后检测晶片/管芯裂纹对于控制封装前的成品率至关重要。显微镜检查的传统方法是在将模具从切割带上剥离下来之后进行的，并且这种拾取和放置过程可能导致进一步的裂纹扩展。本文提出了一种带上裂纹检测技术，以使切割过程中产生的裂纹能够被清晰地识别出来。使用1100 nm的近红外波长进行照明，并使用进料指数匹配液填充胶带的粗糙表面，分别解决了穿透硅基板和在切割胶带处散射的问题。检测系统的照明和成像光学器件均已通过光线跟踪程序进行了设计和仿真，并且原型展示了透视硅衬底和切割带的能力，并能够检测到1.25微米的微裂纹，其分辨率足以满足大多数模具裂纹检查的应用。 （C）2015年美国眼镜学会

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号