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首页> 外文期刊>Electrochimica Acta >Fabrication and structure modulation of high-aspect-ratio porous GaAs through anisotropic chemical etching, anodic etching, and anodic oxidation
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Fabrication and structure modulation of high-aspect-ratio porous GaAs through anisotropic chemical etching, anodic etching, and anodic oxidation

机译：通过各向异性化学刻蚀，阳极刻蚀和阳极氧化制备高纵横比的多孔砷化镓及其结构

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摘要

The fabrication and modulation of hexagonally ordered arrays of deep pores in (111) GaAs were performed by combining colloidal crystal templating, anisotropic chemical etching, localized anodic etching and isotropic anodic oxidation. High-aspect-ratio triangular pore arrays of GaAs along the [111] crystallographic direction were induced by anodic etching in HCl through the apex of inverted triangular pyramid prepits, where electric field strength increased under anodic bias. The triangular pore arrays in GaAs changed to triangular pillar arrays during the anisotropic chemical etching. By applying anodic oxidation in a weak acid solution, the shape of pores in GaAs could be modulated from triangular to circular owing to the leveling effect, and a macroporous GaAs layer was formed. Four types of GaAs microstructure, that is, triangular pore arrays, prism-like pillar arrays, circular pore arrays and needle-like tip arrays, could be obtained by optimizing the chemical etching and anodization conditions.
机译：通过结合胶体晶体模板化，各向异性化学刻蚀，局部阳极刻蚀和各向同性阳极氧化，来制造和调制（111）GaAs中的深孔六角形排列阵列。沿[111]结晶方向的高纵横比的GaAs三角孔阵列是通过在HCl中通过倒置的三角锥预埋坑的顶点在HCl中进行阳极蚀刻而诱发的，其中，电场强度在阳极偏压下增加。在各向异性化学蚀刻过程中，GaAs中的三角形孔阵列变为三角形柱状阵列。通过在弱酸溶液中进行阳极氧化，由于流平效应，可以将GaAs中的孔的形状从三角形调整为圆形，从而形成大孔的GaAs层。通过优化化学刻蚀和阳极氧化条件，可以获得四种类型的GaAs微结构，即三角形孔阵列，棱柱形柱状阵列，圆形孔阵列和针状尖端阵列。

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