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首页> 外文期刊>Microwave and optical technology letters >Wideband high-gain low-profile dual-polarized stacked patch antenna array with parasitic elements
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Wideband high-gain low-profile dual-polarized stacked patch antenna array with parasitic elements

机译：具有寄生元件的宽带高增益低剖面双极化堆叠贴片天线阵列

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To realize wideband high-gain dual-polarized radiation, the proposed antenna array consists of two microstrip feeding networks and two groups, altogether 13 metal radiation patches. One group, namely four of the patches, are two-layer stacked octagonal patches excited by feeding networks directly, and the other group of nine patches, are parasitic rectangular patches for improving both impedance bandwidth and gain level. The height of the antenna array is 7 mm (approximate to 0.083 lambda 0@3.55 GHz). The measured impedance bandwidths for VSWR<1.5 at both ports are 12.6% (3.35-3.8 GHz). The isolation between the two ports is greater than 20 dB over the whole operating band. The measured gain is 16.2 dBi and the cross-polarization level is less than -15 dB. The proposed structure possesses the features of low cost, low profile, high gain, wide band, and so forth. (c) 2015 Wiley Periodicals, Inc. Microwave Opt Technol Lett 57:2012-2016, 2015
机译：为了实现宽带高增益双极化辐射，建议的天线阵列由两个微带馈电网络和两组，共13个金属辐射贴片组成。一组，即四个贴片，是直接通过馈电网络激发的两层堆叠的八边形贴片，另一组九个贴片，是用于改善阻抗带宽和增益水平的寄生矩形贴片。天线阵列的高度为7毫米（大约为0.083λ0@3.55 GHz）。在两个端口上测得的VSWR <1.5的阻抗带宽均为12.6％（3.35-3.8 GHz）。在整个工作频带上，两个端口之间的隔离度大于20 dB。测得的增益为16.2 dBi，交叉极化电平小于-15 dB。所提出的结构具有低成本，低剖面，高增益，宽带等特征。 （c）2015 Wiley Periodicals，Inc.微波选择技术通讯57：2012-2016，2015

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