Field deposition from metallic tips onto insulating substrates

Fostner S.; Tekiel A.; Topple J.M.; Miyahara Y.; Grütter P.

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Field deposition from metallic tips onto insulating substrates

机译：从金属尖端到绝缘基板上的场沉积

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The deposition of gold ions from atomic force microscope cantilever tips onto bulk insulating substrates with nearby surface electrodes is discussed. Numerical models of the potential distribution are used to estimate potential barriers for the desorption process. These models indicate deposition height thresholds of 7-10nm with the tip 20-25nm from the metallic electrode edge over a KBr surface but greater than 20nm high for InP/GaAs/InP substrates with a two-dimensional electron gas (2DEG) as the back electrode. Experimental results for the deposition of gold clusters over KBr surfaces near metal electrodes in ultra-high vacuum (UHV) are presented and show promising agreement with calculations of the deposition threshold heights. Deposition of clusters over InP is discussed for comparison and indicates similar trends.

机译：讨论了原子力显微镜悬臂尖端将金离子沉积到带有附近表面电极的块状绝缘基板上的问题。势分布的数值模型用于估计解吸过程的势垒。这些模型表明沉积高度阈值为7-10nm，尖端距离KBr表面上的金属电极边缘20-25nm，但对于以二维电子气（2DEG）为背面的InP / GaAs / InP衬底，其高度要高出20nm。电极。提出了在超高真空（UHV）中在金属电极附近的KBr表面上金团簇沉积的实验结果，并表明与沉积阈值高度的计算有希望的一致性。讨论了在InP上的簇沉积以进行比较，并表明了类似的趋势。

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《Nanotechnology》 |2011年第46期|共9页
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Fostner S.; Tekiel A.; Topple J.M.; Miyahara Y.; Grütter P.;
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1. Field deposition from metallic tips onto insulating substrates [J] . Fostner S., Tekiel A., Topple J.M., Nanotechnology . 2011,第46期

机译：从金属尖端到绝缘基板上的场沉积
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Field deposition from metallic tips onto insulating substrates

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