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首页> 外文期刊>Nanotechnology >Porosity control in metal-assisted chemical etching of degenerately doped silicon nanowires
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Porosity control in metal-assisted chemical etching of degenerately doped silicon nanowires

机译：简并掺杂硅纳米线的金属辅助化学刻蚀中的孔隙率控制

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摘要

We report the fabrication of degenerately doped silicon (Si) nanowires of different aspect ratios using a simple, low-cost and effective technique that involves metal-assisted chemical etching (MacEtch) combined with soft lithography or thermal dewetting metal patterning. We demonstrate sub-micron diameter Si nanowire arrays with aspect ratios as high as 180:1, and present the challenges in producing solid nanowires using MacEtch as the doping level increases in both p- and n-type Si. We report a systematic reduction in the porosity of these nanowires by adjusting the etching solution composition and temperature. We found that the porosity decreases from top to bottom along the axial direction and increases with etching time. With a MacEtch solution that has a high [HF]:[H _2O _2] ratio and low temperature, it is possible to form completely solid nanowires with aspect ratios of less than approximately 10:1. However, further etching to produce longer wires renders the top portion of the nanowires porous.
机译：我们报告了使用简单，低成本和有效的技术制造具有不同长宽比的简并掺杂的硅（Si）纳米线的技术，该技术涉及与软光刻或热去湿金属图案结合的金属辅助化学蚀刻（MacEtch）。我们演示了长宽比高达180：1的亚微米直径Si纳米线阵列，并提出了随着p型和n型Si掺杂水平的提高，使用MacEtch生产固态纳米线的挑战。我们报告了通过调节蚀刻溶液的成分和温度，系统地降低了这些纳米线的孔隙率。我们发现，孔隙率沿轴向从顶部到底部减小，并随蚀刻时间增加。使用具有高[HF]：[H _2O _2]比和低温的MacEtch溶液，可以形成纵横比小于约10：1的完全固态的纳米线。然而，进一步蚀刻以产生更长的线使得纳米线的顶部多孔。

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