Short wavelength emission of AlGaInP quantum dots grown on GaP substrate

Gerhard S.; Kremling S.; H?fling S.; Worschech L.; Forchel A.

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Short wavelength emission of AlGaInP quantum dots grown on GaP substrate

机译：在GaP衬底上生长的AlGaInP量子点的短波长发射

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We report on the growth of AlGaInP quantum dots (QDs) with Al contents between 0% and 10% on GaP substrate by gas-source molecular beam epitaxy and the investigation of their morphological and low temperature photoluminescence properties. These high areal density QDs show short wavelength emission between 575 and 612nm depending on their composition. The authors interpret the QD emission as originating from indirect type-II transitions. This interpretation is supported by a single-band effective-mass model, which allows us to describe the role of differing barrier composition in the QD emission. Time-resolved photoluminescence measurements are performed and discussed with respect to the calculations.

机译：我们报告了通过气体源分子束外延在GaP衬底上生长Al含量在0％至10％之间的AlGaInP量子点（QD），并研究了它们的形态和低温光致发光特性。这些高面密度量子点根据其组成表现出介于575nm和612nm之间的短波长发射。作者将QD排放解释为源自II型间接转变。这种解释得到了单频带有效质量模型的支持，该模型使我们能够描述QD发射中不同势垒组成的作用。进行时间分辨的光致发光测量并就计算进行讨论。

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《Nanotechnology》 |2011年第41期|共6页
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Gerhard S.; Kremling S.; H?fling S.; Worschech L.; Forchel A.;
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1. Short wavelength emission of AlGaInP quantum dots grown on GaP substrate [J] . Gerhard S., Kremling S., H?fling S., Nanotechnology . 2011,第41期

机译：在GaP衬底上生长的AlGaInP量子点的短波长发射
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3. Achieving wavelength emission beyond the C-band from Type-II InAs-GaAsSb quantum dots grown monolithically on silicon substrate [J] . Salhi A., Alshaibani S., Alaskar Y., Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics . 2019,第期

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Short wavelength emission of AlGaInP quantum dots grown on GaP substrate

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