Organic nonvolatile memory devices with charge trapping multilayer graphene film

Ji Y.; Choe M.; Cho B.; Song S.; Yoon J.; Ko H.C.; Lee T.

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Organic nonvolatile memory devices with charge trapping multilayer graphene film

机译：具有电荷捕获多层石墨烯膜的有机非易失性存储器件

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We fabricated an array-type organic nonvolatile memory device with multilayer graphene (MLG) film embedded in polyimide (PI) layers. The memory devices showed a high ON/OFF ratio (over 10 ~6) and a long retention time (over 10 ~4s). The switching of the Al/PI/MLG/PI/Al memory devices was due to the presence of the MLG film inserted into the PI layers. The double-log currentvoltage characteristics could be explained by the space-charge-limited current conduction based on a charge-trap model. A conductive atomic force microscopy found that the conduction paths in the low-resistance ON state were distributed in a highly localized area, which was associated with a carbon-rich filamentary switching mechanism.

机译：我们制造了一种将多层石墨烯（MLG）膜嵌入聚酰亚胺（PI）层的阵列型有机非易失性存储设备。存储设备显示出高的开/关比（超过10〜6）和长的保留时间（超过10〜4s）。 Al / PI / MLG / PI / Al存储设备的切换是由于插入PI层中的MLG膜的存在。可以通过基于电荷陷阱模型的空间电荷限制电流传导来解释双对数电流电压特性。导电原子力显微镜发现，低电阻导通状态下的导电路径分布在高度局部的区域，这与富碳丝状开关机制有关。

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《Nanotechnology》 |2012年第10期|共6页
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Ji Y.; Choe M.; Cho B.; Song S.; Yoon J.; Ko H.C.; Lee T.;
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1. Organic nonvolatile memory devices with charge trapping multilayer graphene film [J] . Ji Y., Choe M., Cho B., Nanotechnology . 2012,第10期

机译：具有电荷捕获多层石墨烯膜的有机非易失性存储器件
2. Graphene Oxide as a Dielectric and Charge Trap Element in Pentacene-Based Organic Thin-Film Transistors for Nonvolatile Memory [J] . KalyanJyoti Sarkar, Biswajit Pal, Pallab Banerji ACS Omega . 2019,第2期

机译：石墨烯氧化物作为介电和电荷捕集元件，其基于五烯基有机薄膜晶体管，用于非易失性存储器
3. Tunable Memory Characteristics Of Nanostructured, Nonvolatile Charge Trap Memory Devices Based On A Binary Mixture Of Metal Nanoparticles As A Charge Trapping Layer [J] . Jang-Sik Lee, Yong-Mu Kim, Jeong-Hwa Kwon, Advanced Materials . 2009,第2期

机译：基于金属纳米粒子的二元混合物作为电荷陷阱层的纳米结构非易失性电荷陷阱存储器件的可调存储特性
4. Nonvolatile organic transistor-memory devices based on pentacene semiconductors and poly (methyl methacrylate)/graphene quantum-dot composite trap layers [C] . Ying-Jun Shen, Yan-Kuin Su, Hsin-Chieh Yu, 2016 Compound Semiconductor Week Includes 28th International Conference on Indium Phosphide amp; Related Materials amp; 43rd International Symposium on Compound Semiconductors . 2016

机译：基于并五苯半导体和聚（甲基丙烯酸甲酯）/石墨烯量子点复合陷阱层的非易失性有机晶体管存储器件
5. Design, characterization and modeling of charge trapping nonvolatile semiconductor memory devices. [D] . Eichenlaub, Nathan. 2009

机译：电荷捕获非易失性半导体存储器件的设计，表征和建模。
6. Graphene Oxide as a Dielectric and Charge Trap Elementin Pentacene-Based Organic Thin-Film Transistors for Nonvolatile Memory [O] . KalyanJyoti Sarkar, Biswajit Pal, Pallab Banerji, 2019

机译：氧化石墨烯作为介电和电荷陷阱元素并五苯的有机薄膜晶体管在非易失性存储器中的应用
7. Graphene Oxide as a Dielectric and Charge Trap Element in Pentacene-Based Organic Thin-Film Transistors for Nonvolatile Memory [O] . Kalyan Jyoti Sarkar, Biswajit Pal, Pallab Banerji 2019

机译：石墨烯氧化物作为介电和电荷捕集元件，其基于五烯基有机薄膜晶体管，用于非易失性存储器

Organic nonvolatile memory devices with charge trapping multilayer graphene film

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